TY - JOUR
T1 - Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films
AU - Yang, T. R.
PY - 2000
Y1 - 2000
N2 - InSb films were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LPMOCVD). Far-infrared (FIR) reflectance spectroscopy and Raman scattering has been used to study the lattice vibration behavior of these samples and the effects of III-V source ratios on the films crystalline quality to optimize the growth parameters. Lattice vibration modes were characterized. Film thickness, composition, stoichiometry and depth profiles were studied. The carrier concentration, mobility, effective mass as well as the dielectric behavior of these films are fitted by a model of dielectric response.
AB - InSb films were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LPMOCVD). Far-infrared (FIR) reflectance spectroscopy and Raman scattering has been used to study the lattice vibration behavior of these samples and the effects of III-V source ratios on the films crystalline quality to optimize the growth parameters. Lattice vibration modes were characterized. Film thickness, composition, stoichiometry and depth profiles were studied. The carrier concentration, mobility, effective mass as well as the dielectric behavior of these films are fitted by a model of dielectric response.
KW - Far-infrared
KW - InSb
KW - Lattice vibration mode
KW - Raman scattering
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U2 - 10.1016/S0921-4526(99)02622-8
DO - 10.1016/S0921-4526(99)02622-8
M3 - Article
AN - SCOPUS:21244477488
VL - 284-288
SP - 1189
EP - 1190
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - PART II
ER -