Optical characterization and transport behaviors of LPMOCVD-grown InSb epitaxial films

T. R. Yang*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

InSb films were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LPMOCVD). Far-infrared (FIR) reflectance spectroscopy and Raman scattering has been used to study the lattice vibration behavior of these samples and the effects of III-V source ratios on the films crystalline quality to optimize the growth parameters. Lattice vibration modes were characterized. Film thickness, composition, stoichiometry and depth profiles were studied. The carrier concentration, mobility, effective mass as well as the dielectric behavior of these films are fitted by a model of dielectric response.

原文英語
頁(從 - 到)1189-1190
頁數2
期刊Physica B: Condensed Matter
284-288
發行號PART II
DOIs
出版狀態已發佈 - 2000

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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