TY - JOUR
T1 - Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition
AU - Yang, Tzuen Rong
AU - Cheng, Yukun
AU - Wang, Jyun Bi
AU - Chuan Feng, Zhe
N1 - Funding Information:
We acknowledge the support, materials preparation and help in this work from Drs. N. Schumaker, R. Stall, I. Ferguson, and C. Beckham. The work at National Taiwan University was supported by funds from National Science Council of Republic of China, NSC 93-2218-E-002-011 and 93-2215-E-002-035.
PY - 2006/3/1
Y1 - 2006/3/1
N2 - Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition (MOCVD) have been investigated by far-infrared (FIR) reflectance spectroscopy. The lattice vibration behaviors of a series of MOCVD InSb/GaAs(100) materials grown under different growth conditions were studied. Effects of III-V source ratios on the films crystalline quality were examined. Two additional weak modes in the wavenumber regions of 210-240 cm- 1 were observed and they appeared more prominent at low temperatures. Interference fringe effects modify the FIR reflectance band of the GaAs substrate, which are related to the uniformity of film thickness and crystalline perfection. The dielectric constant, phonon modes and other optical parameters, as well as transport properties including carrier concentration, mobility, effective mass were calculated theoretically and compared with experimental results. The obtained distribution values of the InSb LO phonon mode frequency, line width, relative integrated intensity ratio between the forbidden and defect-related TO phonon and the allowed LO mode are adopted as figures of merit for the quality of the InSb films. The electrical transport properties of carrier concentration, mobility, and effective mass as well as the dielectric constant of these films have been determined by optical method non-destructively.
AB - Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition (MOCVD) have been investigated by far-infrared (FIR) reflectance spectroscopy. The lattice vibration behaviors of a series of MOCVD InSb/GaAs(100) materials grown under different growth conditions were studied. Effects of III-V source ratios on the films crystalline quality were examined. Two additional weak modes in the wavenumber regions of 210-240 cm- 1 were observed and they appeared more prominent at low temperatures. Interference fringe effects modify the FIR reflectance band of the GaAs substrate, which are related to the uniformity of film thickness and crystalline perfection. The dielectric constant, phonon modes and other optical parameters, as well as transport properties including carrier concentration, mobility, effective mass were calculated theoretically and compared with experimental results. The obtained distribution values of the InSb LO phonon mode frequency, line width, relative integrated intensity ratio between the forbidden and defect-related TO phonon and the allowed LO mode are adopted as figures of merit for the quality of the InSb films. The electrical transport properties of carrier concentration, mobility, and effective mass as well as the dielectric constant of these films have been determined by optical method non-destructively.
KW - Characterization
KW - Fourier transfer infrared spectroscopy
KW - GaAs
KW - InSb
KW - Metalorganic chemical vapor deposition (MOCVD)
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U2 - 10.1016/j.tsf.2005.07.067
DO - 10.1016/j.tsf.2005.07.067
M3 - Conference article
AN - SCOPUS:30944459247
SN - 0040-6090
VL - 498
SP - 158
EP - 162
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
T2 - Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD
Y2 - 12 November 2004 through 14 November 2004
ER -