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Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition
Z. C. Feng
*
, X. Zhang, S. J. Chua,
T. R. Yang
, J. C. Deng, G. Xu
*
此作品的通信作者
物理學系
研究成果
:
雜誌貢獻
›
會議論文
›
同行評審
22
引文 斯高帕斯（Scopus）
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Material Science
Material
100%
Structural Property
100%
Chemical Vapor Deposition
100%
Photoluminescence
50%
X-Ray Diffraction
50%
Scanning Electron Microscopy
50%
Thin Films
50%
Characterization
50%
Composite Material
50%
Crystalline Material
50%
Amorphous Material
50%
Buffer Layer
50%
Grain Size
50%
Transmission Electron Microscopy
50%
Quantum Well
50%
Materials Property
50%
Physics
Metalorganic Chemical Vapor Deposition
100%
Photoluminescence
50%
X Ray Diffraction
50%
Scanning Electron Microscopy
50%
Substrates
50%
Growth
50%
Transmission Electron Microscopy
50%
Thin Films
50%
Raman Spectra
50%
Adjusting
50%
Wurtzite
50%
Reflectance
50%
Multiple Quantum Well
50%
Low Pressure
50%
Engineering
Structural Property
100%
Substrates
50%
Ray Diffraction
50%
Transmissions
50%
Scattering
50%
Thin Films
50%
Reflectance
50%
Fourier Transform
50%
Buffer Layer
50%
Growth Condition
50%
Structural Design
50%
Low Pressure
50%
Intermediate Layer
50%
INIS
gallium nitrides
100%
chemical vapor deposition
100%
layers
60%
buffers
40%
design
20%
growth
20%
scanning electron microscopy
20%
substrates
20%
photoluminescence
20%
doped materials
20%
x-ray diffraction
20%
thin films
20%
transmission electron microscopy
20%
raman effect
20%
fourier transformation
20%
quantum wells
20%
grain size
20%
monocrystals
20%
low pressure
20%
Chemistry
Structure
100%
Metallorganic Chemical Vapor Deposition
100%
Buffer Solution
66%
Photoluminescence
33%
Liquid Film
33%
Pressure
33%
X-Ray Diffraction
33%
Scattering
33%
Fourier Transform Infrared Spectroscopy
33%