Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

Z. C. Feng; X. Zhang; S. J. Chua; T. R. Yang; J. C. Deng; G. Xu

doi:10.1016/S0040-6090(02)00096-2

Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

Z. C. Feng^*, X. Zhang, S. J. Chua, T. R. Yang, J. C. Deng, G. Xu

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

21 引文斯高帕斯（Scopus）

摘要

GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

原文	英語
頁（從 - 到）	15-22
頁數	8
期刊	Thin Solid Films
卷	409
發行號	1
DOIs	https://doi.org/10.1016/S0040-6090(02)00096-2
出版狀態	已發佈 - 2002 4月 22
事件	Proceedings of the 2nd Asian Conference on Chemical Vapour Dep - Gyeongje, 大韓民國持續時間: 2001 5月 28 → 2001 5月 30

ASJC Scopus subject areas

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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abstract = "GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.",

keywords = "GaN, MOCVD, Optical and structural properties",

author = "Feng, {Z. C.} and X. Zhang and Chua, {S. J.} and Yang, {T. R.} and Deng, {J. C.} and G. Xu",

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TY - JOUR

T1 - Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

AU - Feng, Z. C.

AU - Zhang, X.

AU - Chua, S. J.

AU - Yang, T. R.

AU - Deng, J. C.

AU - Xu, G.

PY - 2002/4/22

Y1 - 2002/4/22

N2 - GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

AB - GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

KW - GaN

KW - MOCVD

KW - Optical and structural properties

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Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

摘要

ASJC Scopus subject areas

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