TY - JOUR
T1 - Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition
AU - Feng, Z. C.
AU - Zhang, X.
AU - Chua, S. J.
AU - Yang, T. R.
AU - Deng, J. C.
AU - Xu, G.
PY - 2002/4/22
Y1 - 2002/4/22
N2 - GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.
AB - GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.
KW - GaN
KW - MOCVD
KW - Optical and structural properties
UR - http://www.scopus.com/inward/record.url?scp=0037156054&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037156054&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(02)00096-2
DO - 10.1016/S0040-6090(02)00096-2
M3 - Conference article
AN - SCOPUS:0037156054
SN - 0040-6090
VL - 409
SP - 15
EP - 22
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1
T2 - Proceedings of the 2nd Asian Conference on Chemical Vapour Dep
Y2 - 28 May 2001 through 30 May 2001
ER -