摘要
GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.
原文 | 英語 |
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頁(從 - 到) | 15-22 |
頁數 | 8 |
期刊 | Thin Solid Films |
卷 | 409 |
發行號 | 1 |
DOIs | |
出版狀態 | 已發佈 - 2002 4月 22 |
事件 | Proceedings of the 2nd Asian Conference on Chemical Vapour Dep - Gyeongje, 大韓民國 持續時間: 2001 5月 28 → 2001 5月 30 |
ASJC Scopus subject areas
- 電子、光磁材料
- 表面和介面
- 表面、塗料和薄膜
- 金屬和合金
- 材料化學