Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

Z. C. Feng; X. Zhang; S. J. Chua; T. R. Yang; J. C. Deng; G. Xu

doi:10.1016/S0040-6090(02)00096-2

Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

Z. C. Feng^*, X. Zhang, S. J. Chua, T. R. Yang, J. C. Deng, G. Xu

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

22 引文斯高帕斯（Scopus）

摘要

GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

原文	英語
頁（從 - 到）	15-22
頁數	8
期刊	Thin Solid Films
卷	409
發行號	1
DOIs	https://doi.org/10.1016/S0040-6090(02)00096-2
出版狀態	已發佈 - 2002 4月 22
事件	Proceedings of the 2nd Asian Conference on Chemical Vapour Dep - Gyeongje, 大韓民國持續時間: 2001 5月 28 → 2001 5月 30

ASJC Scopus subject areas

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

存取文件

10.1016/S0040-6090(02)00096-2

其它文件與鏈接

引用此

@article{2fbb24edcfe34e03a5489d0aa3e143b1,

title = "Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition",

abstract = "GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.",

keywords = "GaN, MOCVD, Optical and structural properties",

author = "Feng, {Z. C.} and X. Zhang and Chua, {S. J.} and Yang, {T. R.} and Deng, {J. C.} and G. Xu",

year = "2002",

month = apr,

day = "22",

doi = "10.1016/S0040-6090(02)00096-2",

language = "English",

volume = "409",

pages = "15--22",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier BV",

number = "1",

note = "Proceedings of the 2nd Asian Conference on Chemical Vapour Dep ; Conference date: 28-05-2001 Through 30-05-2001",

}

TY - JOUR

T1 - Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

AU - Feng, Z. C.

AU - Zhang, X.

AU - Chua, S. J.

AU - Yang, T. R.

AU - Deng, J. C.

AU - Xu, G.

PY - 2002/4/22

Y1 - 2002/4/22

N2 - GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

AB - GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

KW - GaN

KW - MOCVD

KW - Optical and structural properties

UR - http://www.scopus.com/inward/record.url?scp=0037156054&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037156054&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(02)00096-2

DO - 10.1016/S0040-6090(02)00096-2

M3 - Conference article

AN - SCOPUS:0037156054

SN - 0040-6090

VL - 409

SP - 15

EP - 22

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

T2 - Proceedings of the 2nd Asian Conference on Chemical Vapour Dep

Y2 - 28 May 2001 through 30 May 2001

ER -

Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此