Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

Z. C. Feng*, X. Zhang, S. J. Chua, Tzuen-Rong Yang, J. C. Deng, G. Xu

*此作品的通信作者

研究成果: 雜誌貢獻會議論文同行評審

21 引文 斯高帕斯(Scopus)

摘要

GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.

原文英語
頁(從 - 到)15-22
頁數8
期刊Thin Solid Films
409
發行號1
DOIs
出版狀態已發佈 - 2002 四月 22
事件Proceedings of the 2nd Asian Conference on Chemical Vapour Dep - Gyeongje, 大韓民國
持續時間: 2001 五月 282001 五月 30

ASJC Scopus subject areas

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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