Optical and material properties of sandwiched Si/SiGe/Si heterostructures

Z. C. Feng; J. W. Yu; J. Zhao; T. R. Yang; R. P.G. Karunasiri; W. Lu; W. E. Collins

doi:10.1016/j.surfcoat.2005.07.027

Optical and material properties of sandwiched Si/SiGe/Si heterostructures

Z. C. Feng^*, J. W. Yu, J. Zhao, T. R. Yang, R. P.G. Karunasiri, W. Lu, W. E. Collins

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Si_1-xGe_x layers sandwiched between Si were grown at low temperature of 450 °C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including X-ray diffraction (XRD), photoluminescence, Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si_1-x Ge_x layer. The Ge compositions and layer thicknesses were precisely determined by RBS. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth.

原文	英語
頁（從 - 到）	3265-3269
頁數	5
期刊	Surface and Coatings Technology
卷	200
發行號	10 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.surfcoat.2005.07.027
出版狀態	已發佈 - 2006 2月 24

ASJC Scopus subject areas

一般化學
凝聚態物理學
表面和介面
表面、塗料和薄膜
材料化學

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@article{1e8fea31ab75451ebdb5d9450852ed88,

title = "Optical and material properties of sandwiched Si/SiGe/Si heterostructures",

abstract = "Si1-xGex layers sandwiched between Si were grown at low temperature of 450 °C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including X-ray diffraction (XRD), photoluminescence, Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-x Gex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth.",

keywords = "FTIR, MOCVD, RBS, Raman, SIMS, SiGe, XRD",

author = "Feng, {Z. C.} and Yu, {J. W.} and J. Zhao and Yang, {T. R.} and Karunasiri, {R. P.G.} and W. Lu and Collins, {W. E.}",

note = "Funding Information: We acknowledge the help and support from Profs. K.L. Wang, F. Watt, A.T.S. Wee and J. Lin. The work at National Taiwan University was supported by funds from National Science Council of Republic of China, NSC 93-2218-E-002-011 and 93-2215-E-002-035.",

year = "2006",

month = feb,

day = "24",

doi = "10.1016/j.surfcoat.2005.07.027",

language = "English",

volume = "200",

pages = "3265--3269",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier",

number = "10 SPEC. ISS.",

}

TY - JOUR

T1 - Optical and material properties of sandwiched Si/SiGe/Si heterostructures

AU - Feng, Z. C.

AU - Yu, J. W.

AU - Zhao, J.

AU - Yang, T. R.

AU - Karunasiri, R. P.G.

AU - Lu, W.

AU - Collins, W. E.

N1 - Funding Information: We acknowledge the help and support from Profs. K.L. Wang, F. Watt, A.T.S. Wee and J. Lin. The work at National Taiwan University was supported by funds from National Science Council of Republic of China, NSC 93-2218-E-002-011 and 93-2215-E-002-035.

PY - 2006/2/24

Y1 - 2006/2/24

N2 - Si1-xGex layers sandwiched between Si were grown at low temperature of 450 °C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including X-ray diffraction (XRD), photoluminescence, Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-x Gex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth.

AB - Si1-xGex layers sandwiched between Si were grown at low temperature of 450 °C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including X-ray diffraction (XRD), photoluminescence, Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-x Gex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth.

KW - FTIR

KW - MOCVD

KW - RBS

KW - Raman

KW - SIMS

KW - SiGe

KW - XRD

UR - http://www.scopus.com/inward/record.url?scp=31644451868&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31644451868&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2005.07.027

DO - 10.1016/j.surfcoat.2005.07.027

M3 - Article

AN - SCOPUS:31644451868

SN - 0257-8972

VL - 200

SP - 3265

EP - 3269

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 10 SPEC. ISS.

ER -

Optical and material properties of sandwiched Si/SiGe/Si heterostructures

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