Optical and material properties of sandwiched Si/SiGe/Si heterostructures

Z. C. Feng*, J. W. Yu, J. Zhao, T. R. Yang, R. P.G. Karunasiri, W. Lu, W. E. Collins

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

Si1-xGex layers sandwiched between Si were grown at low temperature of 450 °C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including X-ray diffraction (XRD), photoluminescence, Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-x Gex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth.

原文英語
頁(從 - 到)3265-3269
頁數5
期刊Surface and Coatings Technology
200
發行號10 SPEC. ISS.
DOIs
出版狀態已發佈 - 2006 二月 24

ASJC Scopus subject areas

  • 化學 (全部)
  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜
  • 材料化學

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