摘要
The Stranski-Krastanov (S-K) self-assembly process produces quantum dots with a large distribution of sizes. In the S-K growth mode, the in-plane spatial distribution of dots is quasi-random. Different strategies have been used to narrow the size distribution and increase the dot-dot spatial correlation. Here, we report a simple method to reduce the height of taller dots by using the P/As exchange exhibited during CBE growth. The fabrication of InAs/InP quantum dots self-assembled into linear arrays through growth on patterned substrates is described. Photoluminescence from one-dimensional arrays is compared with the non-correlated case of quantum dots grown on planar substrates. The interplay between size and spatial distributions is discussed.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 124-128 |
| 頁數 | 5 |
| 期刊 | Proceedings of SPIE - The International Society for Optical Engineering |
| 卷 | 4078 |
| DOIs | |
| 出版狀態 | 已發佈 - 2000 |
| 對外發佈 | 是 |
| 事件 | Optoelectronic Materials and Devices II - Taipei, Taiwan 持續時間: 2000 7月 26 → 2000 7月 28 |
ASJC Scopus subject areas
- 電子、光磁材料
- 凝聚態物理學
- 電腦科學應用
- 應用數學
- 電氣與電子工程
指紋
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