The Stranski-Krastanov (S-K) self-assembly process produces quantum dots with a large distribution of sizes. In the S-K growth mode, the in-plane spatial distribution of dots is quasi-random. Different strategies have been used to narrow the size distribution and increase the dot-dot spatial correlation. Here, we report a simple method to reduce the height of taller dots by using the P/As exchange exhibited during CBE growth. The fabrication of InAs/InP quantum dots self-assembled into linear arrays through growth on patterned substrates is described. Photoluminescence from one-dimensional arrays is compared with the non-correlated case of quantum dots grown on planar substrates. The interplay between size and spatial distributions is discussed.
|頁（從 - 到）||124-128|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||已發佈 - 2000|
|事件||Optoelectronic Materials and Devices II - Taipei, Taiwan|
持續時間: 2000 7月 26 → 2000 7月 28
ASJC Scopus subject areas