One-dimensional arrays of self-assembled InAs/InP quantum dots

Jacques Lefebvre; Philip J. Poole; John P. McCaffrey; Boris Lamontagne; Geof C. Aers; Chien Ping Lee; Shu Fen Hu; Robin L. Williams

doi:10.1117/12.392132

One-dimensional arrays of self-assembled InAs/InP quantum dots

Jacques Lefebvre^*, Philip J. Poole, John P. McCaffrey, Boris Lamontagne, Geof C. Aers, Chien Ping Lee, Shu Fen Hu, Robin L. Williams

^*此作品的通信作者

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

摘要

The Stranski-Krastanov (S-K) self-assembly process produces quantum dots with a large distribution of sizes. In the S-K growth mode, the in-plane spatial distribution of dots is quasi-random. Different strategies have been used to narrow the size distribution and increase the dot-dot spatial correlation. Here, we report a simple method to reduce the height of taller dots by using the P/As exchange exhibited during CBE growth. The fabrication of InAs/InP quantum dots self-assembled into linear arrays through growth on patterned substrates is described. Photoluminescence from one-dimensional arrays is compared with the non-correlated case of quantum dots grown on planar substrates. The interplay between size and spatial distributions is discussed.

原文	英語
頁（從 - 到）	124-128
頁數	5
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	4078
DOIs	https://doi.org/10.1117/12.392132
出版狀態	已發佈 - 2000
對外發佈	是
事件	Optoelectronic Materials and Devices II - Taipei, Taiwan 持續時間: 2000 7月 26 → 2000 7月 28

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電腦科學應用
應用數學
電氣與電子工程

存取文件

10.1117/12.392132

其它文件與鏈接

引用此

@article{f16571462eb049a8884c354a0dcc7f39,

title = "One-dimensional arrays of self-assembled InAs/InP quantum dots",

abstract = "The Stranski-Krastanov (S-K) self-assembly process produces quantum dots with a large distribution of sizes. In the S-K growth mode, the in-plane spatial distribution of dots is quasi-random. Different strategies have been used to narrow the size distribution and increase the dot-dot spatial correlation. Here, we report a simple method to reduce the height of taller dots by using the P/As exchange exhibited during CBE growth. The fabrication of InAs/InP quantum dots self-assembled into linear arrays through growth on patterned substrates is described. Photoluminescence from one-dimensional arrays is compared with the non-correlated case of quantum dots grown on planar substrates. The interplay between size and spatial distributions is discussed.",

author = "Jacques Lefebvre and Poole, {Philip J.} and McCaffrey, {John P.} and Boris Lamontagne and Aers, {Geof C.} and Lee, {Chien Ping} and Hu, {Shu Fen} and Williams, {Robin L.}",

year = "2000",

doi = "10.1117/12.392132",

language = "English",

volume = "4078",

pages = "124--128",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Optoelectronic Materials and Devices II ; Conference date: 26-07-2000 Through 28-07-2000",

}

TY - JOUR

T1 - One-dimensional arrays of self-assembled InAs/InP quantum dots

AU - Lefebvre, Jacques

AU - Poole, Philip J.

AU - McCaffrey, John P.

AU - Lamontagne, Boris

AU - Aers, Geof C.

AU - Lee, Chien Ping

AU - Hu, Shu Fen

AU - Williams, Robin L.

PY - 2000

Y1 - 2000

N2 - The Stranski-Krastanov (S-K) self-assembly process produces quantum dots with a large distribution of sizes. In the S-K growth mode, the in-plane spatial distribution of dots is quasi-random. Different strategies have been used to narrow the size distribution and increase the dot-dot spatial correlation. Here, we report a simple method to reduce the height of taller dots by using the P/As exchange exhibited during CBE growth. The fabrication of InAs/InP quantum dots self-assembled into linear arrays through growth on patterned substrates is described. Photoluminescence from one-dimensional arrays is compared with the non-correlated case of quantum dots grown on planar substrates. The interplay between size and spatial distributions is discussed.

AB - The Stranski-Krastanov (S-K) self-assembly process produces quantum dots with a large distribution of sizes. In the S-K growth mode, the in-plane spatial distribution of dots is quasi-random. Different strategies have been used to narrow the size distribution and increase the dot-dot spatial correlation. Here, we report a simple method to reduce the height of taller dots by using the P/As exchange exhibited during CBE growth. The fabrication of InAs/InP quantum dots self-assembled into linear arrays through growth on patterned substrates is described. Photoluminescence from one-dimensional arrays is compared with the non-correlated case of quantum dots grown on planar substrates. The interplay between size and spatial distributions is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0033697804&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033697804&partnerID=8YFLogxK

U2 - 10.1117/12.392132

DO - 10.1117/12.392132

M3 - Conference article

AN - SCOPUS:0033697804

SN - 0277-786X

VL - 4078

SP - 124

EP - 128

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Optoelectronic Materials and Devices II

Y2 - 26 July 2000 through 28 July 2000

ER -

One-dimensional arrays of self-assembled InAs/InP quantum dots

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此