On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance

Yu Chien Chiu; Chun Yen Chang; Shiang Shiou Yen; Chia Chi Fan; Hsiao Hsuan Hsu; Chun Hu Cheng; Po Chun Chen; Po Wei Chen; Guan Lin Liou; Min Hung Lee; Chien Liu; Wu Ching Chou

doi:10.1109/IRPS.2016.7574623

On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10¹²-cycling endurance

Yu Chien Chiu, Chun Yen Chang, Shiang Shiou Yen, Chia Chi Fan, Hsiao Hsuan Hsu, Chun Hu Cheng, Po Chun Chen, Po Wei Chen, Guan Lin Liou, Min Hung Lee, Chien Liu, Wu Ching Chou

研究成果: 書貢獻/報告類型 › 會議論文篇章

7 引文斯高帕斯（Scopus）

摘要

Incorporating a charge-trapped ZrSiO with ferroelectric HfZrO dielectrics, we demonstrated a gate-injection versatile memory with sub-60mV/dec subthreshold swing (SS) and large threshold voltage window (Δ Vt) of >2V under a fast 20-ns speed. Moreover, it is revealed that the local defects at ZrSiO/HfZrO interface affect the ferroelectric negative capacitance tuning and thus increases the variability of Vt and SS during 10¹² cycling endurance.

原文	英語
主出版物標題	2016 International Reliability Physics Symposium, IRPS 2016
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	MY71-MY75
ISBN（電子）	9781467391368
DOIs	https://doi.org/10.1109/IRPS.2016.7574623
出版狀態	已發佈 - 2016 9月 22
事件	2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, 美国持續時間: 2016 4月 17 → 2016 4月 21

出版系列

名字	IEEE International Reliability Physics Symposium Proceedings
卷	2016-September
ISSN（列印）	1541-7026

其他

其他	2016 International Reliability Physics Symposium, IRPS 2016
國家/地區	美国
城市	Pasadena
期間	2016/04/17 → 2016/04/21

ASJC Scopus subject areas

一般工程

存取文件

10.1109/IRPS.2016.7574623

其它文件與鏈接

引用此

Chiu, Y. C., Chang, C. Y., Yen, S. S., Fan, C. C., Hsu, H. H., Cheng, C. H., Chen, P. C., Chen, P. W., Liou, G. L., Lee, M. H., Liu, C., & Chou, W. C. (2016). On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10¹²-cycling endurance. 於 2016 International Reliability Physics Symposium, IRPS 2016 (頁 MY71-MY75). 文章 7574623 (IEEE International Reliability Physics Symposium Proceedings; 卷 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2016.7574623

On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10¹²-cycling endurance. / Chiu, Yu Chien; Chang, Chun Yen; Yen, Shiang Shiou 等.
2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. MY71-MY75 7574623 (IEEE International Reliability Physics Symposium Proceedings; 卷 2016-September).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Chiu, YC, Chang, CY, Yen, SS, Fan, CC, Hsu, HH, Cheng, CH, Chen, PC, Chen, PW, Liou, GL, Lee, MH, Liu, C & Chou, WC 2016, On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10¹²-cycling endurance. 於 2016 International Reliability Physics Symposium, IRPS 2016., 7574623, IEEE International Reliability Physics Symposium Proceedings, 卷 2016-September, Institute of Electrical and Electronics Engineers Inc., 頁 MY71-MY75, 2016 International Reliability Physics Symposium, IRPS 2016, Pasadena, 美国, 2016/04/17. https://doi.org/10.1109/IRPS.2016.7574623

Chiu YC, Chang CY, Yen SS, Fan CC, Hsu HH, Cheng CH 等. On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10¹²-cycling endurance. 於 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. MY71-MY75. 7574623. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2016.7574623

Chiu, Yu Chien ; Chang, Chun Yen ; Yen, Shiang Shiou 等. / On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10¹²-cycling endurance. 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 頁 MY71-MY75 (IEEE International Reliability Physics Symposium Proceedings).

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abstract = "Incorporating a charge-trapped ZrSiO with ferroelectric HfZrO dielectrics, we demonstrated a gate-injection versatile memory with sub-60mV/dec subthreshold swing (SS) and large threshold voltage window (Δ Vt) of >2V under a fast 20-ns speed. Moreover, it is revealed that the local defects at ZrSiO/HfZrO interface affect the ferroelectric negative capacitance tuning and thus increases the variability of Vt and SS during 1012 cycling endurance.",

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author = "Chiu, {Yu Chien} and Chang, {Chun Yen} and Yen, {Shiang Shiou} and Fan, {Chia Chi} and Hsu, {Hsiao Hsuan} and Cheng, {Chun Hu} and Chen, {Po Chun} and Chen, {Po Wei} and Liou, {Guan Lin} and Lee, {Min Hung} and Chien Liu and Chou, {Wu Ching}",

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AU - Hsu, Hsiao Hsuan

AU - Cheng, Chun Hu

AU - Chen, Po Chun

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