On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance

Yu Chien Chiu, Chun Yen Chang, Shiang Shiou Yen, Chia Chi Fan, Hsiao Hsuan Hsu, Chun Hu Cheng, Po Chun Chen, Po Wei Chen, Guan Lin Liou, Min Hung Lee, Chien Liu, Wu Ching Chou

研究成果: 書貢獻/報告類型會議貢獻

1 引文 (Scopus)

摘要

Incorporating a charge-trapped ZrSiO with ferroelectric HfZrO dielectrics, we demonstrated a gate-injection versatile memory with sub-60mV/dec subthreshold swing (SS) and large threshold voltage window (Δ Vt) of >2V under a fast 20-ns speed. Moreover, it is revealed that the local defects at ZrSiO/HfZrO interface affect the ferroelectric negative capacitance tuning and thus increases the variability of Vt and SS during 1012 cycling endurance.

原文英語
主出版物標題2016 International Reliability Physics Symposium, IRPS 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面MY71-MY75
ISBN(電子)9781467391368
DOIs
出版狀態已發佈 - 2016 九月 22
事件2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, 美国
持續時間: 2016 四月 172016 四月 21

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
2016-September
ISSN(列印)1541-7026

其他

其他2016 International Reliability Physics Symposium, IRPS 2016
國家美国
城市Pasadena
期間16/4/1716/4/21

指紋

Threshold voltage
Ferroelectric materials
Durability
Data storage equipment
Capacitance
Tuning
Defects

ASJC Scopus subject areas

  • Engineering(all)

引用此文

Chiu, Y. C., Chang, C. Y., Yen, S. S., Fan, C. C., Hsu, H. H., Cheng, C. H., ... Chou, W. C. (2016). On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance. 於 2016 International Reliability Physics Symposium, IRPS 2016 (頁 MY71-MY75). [7574623] (IEEE International Reliability Physics Symposium Proceedings; 卷 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2016.7574623

On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance. / Chiu, Yu Chien; Chang, Chun Yen; Yen, Shiang Shiou; Fan, Chia Chi; Hsu, Hsiao Hsuan; Cheng, Chun Hu; Chen, Po Chun; Chen, Po Wei; Liou, Guan Lin; Lee, Min Hung; Liu, Chien; Chou, Wu Ching.

2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. MY71-MY75 7574623 (IEEE International Reliability Physics Symposium Proceedings; 卷 2016-September).

研究成果: 書貢獻/報告類型會議貢獻

Chiu, YC, Chang, CY, Yen, SS, Fan, CC, Hsu, HH, Cheng, CH, Chen, PC, Chen, PW, Liou, GL, Lee, MH, Liu, C & Chou, WC 2016, On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance. 於 2016 International Reliability Physics Symposium, IRPS 2016., 7574623, IEEE International Reliability Physics Symposium Proceedings, 卷 2016-September, Institute of Electrical and Electronics Engineers Inc., 頁 MY71-MY75, 2016 International Reliability Physics Symposium, IRPS 2016, Pasadena, 美国, 16/4/17. https://doi.org/10.1109/IRPS.2016.7574623
Chiu YC, Chang CY, Yen SS, Fan CC, Hsu HH, Cheng CH 等. On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance. 於 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. MY71-MY75. 7574623. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2016.7574623
Chiu, Yu Chien ; Chang, Chun Yen ; Yen, Shiang Shiou ; Fan, Chia Chi ; Hsu, Hsiao Hsuan ; Cheng, Chun Hu ; Chen, Po Chun ; Chen, Po Wei ; Liou, Guan Lin ; Lee, Min Hung ; Liu, Chien ; Chou, Wu Ching. / On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance. 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 頁 MY71-MY75 (IEEE International Reliability Physics Symposium Proceedings).
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abstract = "Incorporating a charge-trapped ZrSiO with ferroelectric HfZrO dielectrics, we demonstrated a gate-injection versatile memory with sub-60mV/dec subthreshold swing (SS) and large threshold voltage window (Δ Vt) of >2V under a fast 20-ns speed. Moreover, it is revealed that the local defects at ZrSiO/HfZrO interface affect the ferroelectric negative capacitance tuning and thus increases the variability of Vt and SS during 1012 cycling endurance.",
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AU - Chen, Po Chun

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