On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance

Yu Chien Chiu, Chun Yen Chang, Shiang Shiou Yen, Chia Chi Fan, Hsiao Hsuan Hsu, Chun Hu Cheng, Po Chun Chen, Po Wei Chen, Guan Lin Liou, Min Hung Lee, Chien Liu, Wu Ching Chou

研究成果: 書貢獻/報告類型會議論文篇章

2 引文 斯高帕斯(Scopus)

摘要

Incorporating a charge-trapped ZrSiO with ferroelectric HfZrO dielectrics, we demonstrated a gate-injection versatile memory with sub-60mV/dec subthreshold swing (SS) and large threshold voltage window (Δ Vt) of >2V under a fast 20-ns speed. Moreover, it is revealed that the local defects at ZrSiO/HfZrO interface affect the ferroelectric negative capacitance tuning and thus increases the variability of Vt and SS during 1012 cycling endurance.

原文英語
主出版物標題2016 International Reliability Physics Symposium, IRPS 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面MY71-MY75
ISBN(電子)9781467391368
DOIs
出版狀態已發佈 - 2016 九月 22
事件2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, 美国
持續時間: 2016 四月 172016 四月 21

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
2016-September
ISSN(列印)1541-7026

其他

其他2016 International Reliability Physics Symposium, IRPS 2016
國家/地區美国
城市Pasadena
期間2016/04/172016/04/21

ASJC Scopus subject areas

  • 工程 (全部)

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