On the kinetics of growth of highly defective GaN epilayers and the origin of the deep trap responsible for yellow-band luminescence

H. Liu*, J. G. Kim, M. H. Ludwig, R. M. Park

*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

25 引文 斯高帕斯（Scopus）

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INIS

Biochemistry, Genetics and Molecular Biology

Material Science

Chemistry

Pharmacology, Toxicology and Pharmaceutical Science