@inproceedings{e965b2ff7a9e44ad9d594b32da71a18e,
title = "On-Die Bidirectional ESD Protection Circuit for GaN-on-Silicon Power HEMT",
abstract = "An on-die bidirectional gate-to-source ESD protection circuit for power high-electron-mobility transistors (HEMTs) is proposed and verified in a GaN-on-Si process. A voltage detection mechanism is incorporated to ensure that the ESD protection circuit is selectively activated only under ESD stress conditions, thereby minimizing standby leakage current during normal operation. High ESD robustness has been successfully achieved, where human body model (HBM) level exceeding ± 8 kV and human metal model (HMM) level with IEC ESD Gun beyond ± 2.5 kV have been verified. Furthermore, a surge level exceeding ± 45\textbackslash{}V has been demonstrated.",
keywords = "Electrostatic discharge (ESD), ESD protection circuit, GaN-on-Silicon, High-electron mobility transistor (HEMT), Human body model (HBM), Human metal model (HMM), Surge test",
author = "Ker, \{Chieh Chen\} and Lin, \{Chun Yu\} and Ker, \{Ming Dou\} and Chang, \{Yu Hsuan\} and Li, \{Ching Wei\} and Chiang, \{Tsung Yin\} and Wang, \{Chun Chi\}",
note = "Publisher Copyright: {\textcopyright} 2026 IEEE.; 2026 IEEE International Reliability Physics Symposium, IRPS 2026 ; Conference date: 22-03-2026 Through 26-03-2026",
year = "2026",
doi = "10.1109/IRPS61424.2026.11499152",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2026 IEEE International Reliability Physics Symposium, IRPS 2026",
}