On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity

Reui San Chen*, Shiao Wen Wang, Zon Huang Lan, Jeff Tsung Hui Tsai, Chien Ting Wu, Li Chyong Chen, Kuei Hsien Chen, Ying Sheng Huang, Chia Chun Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

63 引文 斯高帕斯(Scopus)

摘要

On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices (NB) with ultrahigh photocurrent responsivity was demonstrated. A commercial wafer with a 2.0∓0.5μm thick layer of highly n+-doped c-plane GaN on sapphire was used as the substrate for fabrication of the NB device and arrays of Ni/n+-GaN electrode posts were patterned on the insulating sapphire substrate through the photolithography, lift-off, and reactive-ion etching methods. Arrays of n+-GaN posts were also prepatterned to expose a sidewall of selected orientation and after Au catalyst sputtering, nanowires were grown by thermal chemical vapor deposition (CVD) under the conditions of 800-1050°C and 760 Torr using NH3 and Ga as source reagents. High Resolution Transmission Electron Microscopy (HRTEM) and selected area electron diffractometry (SAED) were used to characterize the microstructure and orientation relationship of the NBs.

原文英語
頁(從 - 到)925-929
頁數5
期刊Small
4
發行號7
DOIs
出版狀態已發佈 - 2008 七月 1

ASJC Scopus subject areas

  • 生物技術
  • 生物材料
  • 化學 (全部)
  • 材料科學(全部)

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