On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration

Guan Yi Li; Chun Yu Lin

doi:10.1109/APCCAS.2016.7803948

On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration

Guan Yi Li, Chun Yu Lin

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

2 引文斯高帕斯（Scopus）

摘要

To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.

原文	英語
主出版物標題	2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	258-261
頁數	4
ISBN（電子）	9781509015702
DOIs	https://doi.org/10.1109/APCCAS.2016.7803948
出版狀態	已發佈 - 2017 1月 3
事件	2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 - Jeju, 大韓民國持續時間: 2016 10月 25 → 2016 10月 28

出版系列

名字	2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016

其他

其他	2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
國家/地區	大韓民國
城市	Jeju
期間	2016/10/25 → 2016/10/28

ASJC Scopus subject areas

電氣與電子工程
訊號處理

存取文件

10.1109/APCCAS.2016.7803948

其它文件與鏈接

Link to publication in Scopus

引用此

Li, G. Y., & Lin, C. Y. (2017). On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. 於 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 (頁 258-261). 文章 7803948 (2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APCCAS.2016.7803948

On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. / Li, Guan Yi; Lin, Chun Yu.
2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 258-261 7803948 (2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Li, GY & Lin, CY 2017, On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. 於 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016., 7803948, 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016, Institute of Electrical and Electronics Engineers Inc., 頁 258-261, 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016, Jeju, 大韓民國, 2016/10/25. https://doi.org/10.1109/APCCAS.2016.7803948

Li GY, Lin CY. On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. 於 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 258-261. 7803948. (2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016). doi: 10.1109/APCCAS.2016.7803948

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abstract = "To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.",

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N2 - To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.

AB - To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.

KW - Diode string

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KW - silicon-controlled rectifier (SCR)

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On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration

摘要

出版系列

其他

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此