On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration

Guan Yi Li, Chun Yu Lin

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

摘要

To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.

原文英語
主出版物標題2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面258-261
頁數4
ISBN(電子)9781509015702
DOIs
出版狀態已發佈 - 2017 一月 3
事件2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 - Jeju, 大韓民國
持續時間: 2016 十月 252016 十月 28

出版系列

名字2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016

其他

其他2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
國家大韓民國
城市Jeju
期間2016/10/252016/10/28

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Signal Processing

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