On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration

Guan Yi Li, Chun Yu Lin

研究成果: 書貢獻/報告類型會議論文篇章

2 引文 斯高帕斯(Scopus)

摘要

To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.

原文英語
主出版物標題2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面258-261
頁數4
ISBN(電子)9781509015702
DOIs
出版狀態已發佈 - 2017 一月 3
事件2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 - Jeju, 大韓民國
持續時間: 2016 十月 252016 十月 28

出版系列

名字2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016

其他

其他2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
國家/地區大韓民國
城市Jeju
期間2016/10/252016/10/28

ASJC Scopus subject areas

  • 電氣與電子工程
  • 訊號處理

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