Ohmic contact to p-type GaN using a novel Ni/Cu scheme

S. H. Liu, J. M. Hwang, Z. H. Hwang, W. H. Hung, H. L. Hwang*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)

摘要

In this paper, formation of low resistance ohmic contact to p-type GaN using an alloy of Ni/Cu was reported. The Mg doped samples were deposited with Ni (20nm)/Cu (20nm) and then annealed in nitrogen ambient at different annealing temperatures ranging from 400 to 700 °C. A good ohmic contact with a specific contact resistance of 1.31 × 10 -4 Ω cm 2 was obtained when the sample was annealed at 600 °C for 30 s. The decrease of specific contact resistance is attributed to the increased contact area and local electric field, and extraction of hydrogen from the p-type GaN.

原文英語
頁(從 - 到)907-911
頁數5
期刊Applied Surface Science
212-213
發行號SPEC.
DOIs
出版狀態已發佈 - 2003 五月 15

ASJC Scopus subject areas

  • 化學 (全部)
  • 凝聚態物理學
  • 物理與天文學 (全部)
  • 表面和介面
  • 表面、塗料和薄膜

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