Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells

Y. M. Chang; H. H. Lin; C. T. Chia; Y. F. Chen

doi:10.1063/1.1704859

Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells

Y. M. Chang^*
, H. H. Lin
, C. T. Chia
, Y. F. Chen

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

11 引文斯高帕斯（Scopus）

摘要

The coherent interfacial optical phonon dynamics of GaInP/GaAs/GaInP single quantum wells (SQW) were studied. The time resolved second harmonic generation (TRSHG) technique was used for the study of the phonon dynamics. A localized phonon mode at 9.4 THz was identified in the GaInP/GaAs hetero-interface. A window-gated Fourier transform was used to analyze the free induced dephasing of the interfacial phonon. A strong correlation between the dephasing time of coherent phonons and the growth temperature of the SQW sample was observed.

原文	英語
頁（從 - 到）	2548-2550
頁數	3
期刊	Applied Physics Letters
卷	84
發行號	14
DOIs	https://doi.org/10.1063/1.1704859
出版狀態	已發佈 - 2004 4月 5

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.1704859

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abstract = "The coherent interfacial optical phonon dynamics of GaInP/GaAs/GaInP single quantum wells (SQW) were studied. The time resolved second harmonic generation (TRSHG) technique was used for the study of the phonon dynamics. A localized phonon mode at 9.4 THz was identified in the GaInP/GaAs hetero-interface. A window-gated Fourier transform was used to analyze the free induced dephasing of the interfacial phonon. A strong correlation between the dephasing time of coherent phonons and the growth temperature of the SQW sample was observed.",

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AU - Chang, Y. M.

AU - Lin, H. H.

AU - Chia, C. T.

AU - Chen, Y. F.

PY - 2004/4/5

Y1 - 2004/4/5

N2 - The coherent interfacial optical phonon dynamics of GaInP/GaAs/GaInP single quantum wells (SQW) were studied. The time resolved second harmonic generation (TRSHG) technique was used for the study of the phonon dynamics. A localized phonon mode at 9.4 THz was identified in the GaInP/GaAs hetero-interface. A window-gated Fourier transform was used to analyze the free induced dephasing of the interfacial phonon. A strong correlation between the dephasing time of coherent phonons and the growth temperature of the SQW sample was observed.

AB - The coherent interfacial optical phonon dynamics of GaInP/GaAs/GaInP single quantum wells (SQW) were studied. The time resolved second harmonic generation (TRSHG) technique was used for the study of the phonon dynamics. A localized phonon mode at 9.4 THz was identified in the GaInP/GaAs hetero-interface. A window-gated Fourier transform was used to analyze the free induced dephasing of the interfacial phonon. A strong correlation between the dephasing time of coherent phonons and the growth temperature of the SQW sample was observed.

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SP - 2548

EP - 2550

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells

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