The coherent interfacial optical phonon dynamics of GaInP/GaAs/GaInP single quantum wells (SQW) were studied. The time resolved second harmonic generation (TRSHG) technique was used for the study of the phonon dynamics. A localized phonon mode at 9.4 THz was identified in the GaInP/GaAs hetero-interface. A window-gated Fourier transform was used to analyze the free induced dephasing of the interfacial phonon. A strong correlation between the dephasing time of coherent phonons and the growth temperature of the SQW sample was observed.
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