TY - GEN
T1 - Novel ultra-low power RRAM with good endurance and retention
AU - Cheng, C. H.
AU - Chin, Albert
AU - Yeh, F. S.
PY - 2010
Y1 - 2010
N2 - We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4×105 at 85°C, good 106 cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.
AB - We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4×105 at 85°C, good 106 cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.
UR - http://www.scopus.com/inward/record.url?scp=77957863654&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957863654&partnerID=8YFLogxK
U2 - 10.1109/VLSIT.2010.5556180
DO - 10.1109/VLSIT.2010.5556180
M3 - Conference contribution
AN - SCOPUS:77957863654
SN - 9781424476374
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - 85
EP - 86
BT - 2010 Symposium on VLSI Technology, VLSIT 2010
T2 - 2010 Symposium on VLSI Technology, VLSIT 2010
Y2 - 15 June 2010 through 17 June 2010
ER -