Novel T shape structure PCM and electrical-thermal characteristics

W. H. Wang*, D. S. Chao, Y. C. Chen, C. M. Lee, H. H. Hsu, Y. Chuo, M. H. Tseng, M. H. Lee, W. S. Chen, M. J. Kao, M. J. Tsai

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

3 引文 斯高帕斯(Scopus)

摘要

Novel interfacial layer structure was proposed with adjustable resistance ratio and more uniform data distribution capabilities. The reduction of writing power can also be expected with further optimizing the materials and corresponding thicknesses. The performance will be even better with the shrinking of contact area.

原文英語
主出版物標題2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
頁面40-41
頁數2
DOIs
出版狀態已發佈 - 2006
對外發佈
事件2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, 臺灣
持續時間: 2006 4月 242006 4月 26

出版系列

名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings

其他

其他2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
國家/地區臺灣
城市Hsinchu
期間2006/04/242006/04/26

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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