Novel structure in Ge/Si epilayers grown at low temperature

H. H. Cheng; C. T. Chia; V. A. Markov; X. J. Guo; C. C. Chen; Y. H. Peng; C. H. Kuan

doi:10.1016/S0040-6090(00)00802-6

Novel structure in Ge/Si epilayers grown at low temperature

H. H. Cheng^*, C. T. Chia, V. A. Markov, X. J. Guo, C. C. Chen, Y. H. Peng, C. H. Kuan

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

12 引文斯高帕斯（Scopus）

摘要

We report the growth of Ge/Si strained layer at low temperature. A new growth mode is observed where `groove islands' are formed beneath the Ge wetting layer. The new structure exhibits an Ge concentration dependent profile along the growth direction. This effect is tentatively attributed to the stress-driven intermixing of Ge/Si during the growth.

原文	英語
頁（從 - 到）	182-184
頁數	3
期刊	Thin Solid Films
卷	369
發行號	1
DOIs	https://doi.org/10.1016/S0040-6090(00)00802-6
出版狀態	已發佈 - 2000 7月 3
事件	The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn 持續時間: 1999 9月 12 → 1999 9月 17

ASJC Scopus subject areas

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/S0040-6090(00)00802-6

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title = "Novel structure in Ge/Si epilayers grown at low temperature",

abstract = "We report the growth of Ge/Si strained layer at low temperature. A new growth mode is observed where `groove islands' are formed beneath the Ge wetting layer. The new structure exhibits an Ge concentration dependent profile along the growth direction. This effect is tentatively attributed to the stress-driven intermixing of Ge/Si during the growth.",

author = "Cheng, {H. H.} and Chia, {C. T.} and Markov, {V. A.} and Guo, {X. J.} and Chen, {C. C.} and Peng, {Y. H.} and Kuan, {C. H.}",

note = "Funding Information: Financial support from National Science Council and Taiwan University is gratefully acknowledge.; The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) ; Conference date: 12-09-1999 Through 17-09-1999",

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TY - JOUR

T1 - Novel structure in Ge/Si epilayers grown at low temperature

AU - Cheng, H. H.

AU - Chia, C. T.

AU - Markov, V. A.

AU - Guo, X. J.

AU - Chen, C. C.

AU - Peng, Y. H.

AU - Kuan, C. H.

N1 - Funding Information: Financial support from National Science Council and Taiwan University is gratefully acknowledge.

PY - 2000/7/3

Y1 - 2000/7/3

N2 - We report the growth of Ge/Si strained layer at low temperature. A new growth mode is observed where `groove islands' are formed beneath the Ge wetting layer. The new structure exhibits an Ge concentration dependent profile along the growth direction. This effect is tentatively attributed to the stress-driven intermixing of Ge/Si during the growth.

AB - We report the growth of Ge/Si strained layer at low temperature. A new growth mode is observed where `groove islands' are formed beneath the Ge wetting layer. The new structure exhibits an Ge concentration dependent profile along the growth direction. This effect is tentatively attributed to the stress-driven intermixing of Ge/Si during the growth.

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U2 - 10.1016/S0040-6090(00)00802-6

DO - 10.1016/S0040-6090(00)00802-6

M3 - Conference article

AN - SCOPUS:0034224494

SN - 0040-6090

VL - 369

SP - 182

EP - 184

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

T2 - The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI)

Y2 - 12 September 1999 through 17 September 1999

ER -

Novel structure in Ge/Si epilayers grown at low temperature

摘要

ASJC Scopus subject areas

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