Novel structure in Ge/Si epilayers grown at low temperature

H. H. Cheng, C. T. Chia, V. A. Markov, X. J. Guo, C. C. Chen, Y. H. Peng, C. H. Kuan

研究成果: 雜誌貢獻Conference article同行評審

12 引文 斯高帕斯(Scopus)

摘要

We report the growth of Ge/Si strained layer at low temperature. A new growth mode is observed where `groove islands' are formed beneath the Ge wetting layer. The new structure exhibits an Ge concentration dependent profile along the growth direction. This effect is tentatively attributed to the stress-driven intermixing of Ge/Si during the growth.

原文英語
頁(從 - 到)182-184
頁數3
期刊Thin Solid Films
369
發行號1
DOIs
出版狀態已發佈 - 2000 七月 3
事件The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
持續時間: 1999 九月 121999 九月 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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