Novel positive-tone thick photoresist for high aspect ratio microsystem technology

G. W. Hsieh; Y. S. Hsieh; C. R. Yang; Y. D. Lee

doi:10.1007/s00542-001-0158-2

Novel positive-tone thick photoresist for high aspect ratio microsystem technology

G. W. Hsieh
, Y. S. Hsieh
, C. R. Yang
, Y. D. Lee^*

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.

原文	英語
頁（從 - 到）	326-329
頁數	4
期刊	Microsystem Technologies
卷	8
發行號	4-5
DOIs	https://doi.org/10.1007/s00542-001-0158-2
出版狀態	已發佈 - 2002 8月

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
硬體和架構
電氣與電子工程

存取文件

10.1007/s00542-001-0158-2

其它文件與鏈接

引用此

@article{a7d0d3059ed64d4e9c7bdaedf19764b7,

title = "Novel positive-tone thick photoresist for high aspect ratio microsystem technology",

abstract = "A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.",

author = "Hsieh, \{G. W.\} and Hsieh, \{Y. S.\} and Yang, \{C. R.\} and Lee, \{Y. D.\}",

year = "2002",

month = aug,

doi = "10.1007/s00542-001-0158-2",

language = "English",

volume = "8",

pages = "326--329",

journal = "Microsystem Technologies",

issn = "0946-7076",

publisher = "Springer Science and Business Media Deutschland GmbH",

number = "4-5",

}

TY - JOUR

T1 - Novel positive-tone thick photoresist for high aspect ratio microsystem technology

AU - Hsieh, G. W.

AU - Hsieh, Y. S.

AU - Yang, C. R.

AU - Lee, Y. D.

PY - 2002/8

Y1 - 2002/8

N2 - A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.

AB - A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.

UR - https://www.scopus.com/pages/publications/0036694019

UR - https://www.scopus.com/pages/publications/0036694019#tab=citedBy

U2 - 10.1007/s00542-001-0158-2

DO - 10.1007/s00542-001-0158-2

M3 - Article

AN - SCOPUS:0036694019

SN - 0946-7076

VL - 8

SP - 326

EP - 329

JO - Microsystem Technologies

JF - Microsystem Technologies

IS - 4-5

ER -

Novel positive-tone thick photoresist for high aspect ratio microsystem technology

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此