Novel positive-tone thick photoresist for high aspect ratio microsystem technology

G. W. Hsieh; Y. S. Hsieh; C. R. Yang; Y. D. Lee

doi:10.1007/s00542-001-0158-2

Novel positive-tone thick photoresist for high aspect ratio microsystem technology

G. W. Hsieh, Y. S. Hsieh, C. R. Yang, Y. D. Lee^*

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.

原文	英語
頁（從 - 到）	326-329
頁數	4
期刊	Microsystem Technologies
卷	8
發行號	4-5
DOIs	https://doi.org/10.1007/s00542-001-0158-2
出版狀態	已發佈 - 2002 8月

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
硬體和架構
電氣與電子工程

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10.1007/s00542-001-0158-2

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title = "Novel positive-tone thick photoresist for high aspect ratio microsystem technology",

abstract = "A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.",

author = "Hsieh, {G. W.} and Hsieh, {Y. S.} and Yang, {C. R.} and Lee, {Y. D.}",

year = "2002",

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doi = "10.1007/s00542-001-0158-2",

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AU - Hsieh, Y. S.

AU - Yang, C. R.

AU - Lee, Y. D.

PY - 2002/8

Y1 - 2002/8

N2 - A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.

AB - A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.

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Novel positive-tone thick photoresist for high aspect ratio microsystem technology

摘要

ASJC Scopus subject areas

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