Novel photodetector using MOS tunneling structures

C. W. Liu*, W. T. Liu, M. H. Lee, W. S. Kuo, B. C. Hsu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

68 引文 斯高帕斯(Scopus)

摘要

A metal/oxide/p-Si structure with the ultrathin oxide is utilized as a photodetector. At positive gate bias, the dark current of the photodetector is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000 °C) of the gate oxide can reduce the dark current to a level as low as 3 nA/cm2. As biased in the inversion layer, the tunneling diode works in the deep depletion region with the soft pinning of oxide voltage, instead of the pinning of surface potential, very different from the conventional MOS diode with thick oxide.

原文英語
頁(從 - 到)307-309
頁數3
期刊IEEE Electron Device Letters
21
發行號6
DOIs
出版狀態已發佈 - 2000 六月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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