Novel photodetector using MOS tunneling structures

C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, B. C. Hsu

    研究成果: 雜誌貢獻文章同行評審

    61 引文 斯高帕斯(Scopus)

    摘要

    A metal/oxide/p-Si structure with the ultrathin oxide is utilized as a photodetector. At positive gate bias, the dark current of the photodetector is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000 °C) of the gate oxide can reduce the dark current to a level as low as 3 nA/cm2. As biased in the inversion layer, the tunneling diode works in the deep depletion region with the soft pinning of oxide voltage, instead of the pinning of surface potential, very different from the conventional MOS diode with thick oxide.

    原文英語
    頁(從 - 到)307-309
    頁數3
    期刊IEEE Electron Device Letters
    21
    發行號6
    DOIs
    出版狀態已發佈 - 2000 六月 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    指紋 深入研究「Novel photodetector using MOS tunneling structures」主題。共同形成了獨特的指紋。

    引用此