@article{789ca61f9a0c415d9599e126fe597e46,
title = "Novel methods to incorporate deuterium in the MOS structures",
abstract = "The deuterium concentration as high as 2 × 10 20 cm -3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO 2/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 20 cm -3, but also leads to the formation of rough oxide.",
keywords = "Deuterium incorporation, Interface states, MOS, Very high vacuum prebake",
author = "Lee, {M. H.} and Lin, {C. H.} and Liu, {C. W.}",
note = "Funding Information: Manuscript received June 26, 2001; revised August 6, 2001. This work was supported by the National Science Council of Taiwan, R.O.C., (89-2218-E-002-082, 89-2218-E-002-054) and TSMC (Taiwan Semiconductor Manufacturing Company). The review of this letter was arranged by Editor K. De Meyer.",
year = "2001",
month = nov,
doi = "10.1109/55.962649",
language = "English",
volume = "22",
pages = "519--521",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}