Novel methods to incorporate deuterium in the MOS structures

M. H. Lee, C. H. Lin, C. W. Liu

研究成果: 雜誌貢獻文章

6 引文 斯高帕斯(Scopus)

摘要

The deuterium concentration as high as 2 × 10 20 cm -3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO 2/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 20 cm -3, but also leads to the formation of rough oxide.

原文英語
頁(從 - 到)519-521
頁數3
期刊IEEE Electron Device Letters
22
發行號11
DOIs
出版狀態已發佈 - 2001 十一月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

指紋 深入研究「Novel methods to incorporate deuterium in the MOS structures」主題。共同形成了獨特的指紋。

  • 引用此