The deuterium concentration as high as 2 × 10 20 cm -3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO 2/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 20 cm -3, but also leads to the formation of rough oxide.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering