摘要
In this paper, we investigated several kinds of a-Si:H TFTs structures fabricated on polyimide (PI) substrate at 160 °C under 1×10 4 cycles of mechanical bending stress. After mechanical bending stress, the threshold voltage of different a-Si:H TFTs structures have different shift. It is a critical task to optimize suitable design for a-Si:H TFTs on flexible substrate. L-shape design a-Si:H TFTs with better stability after bending stress. It is a good candidate for the SOP or pixel array on flexible substrate.
原文 | 英語 |
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頁面 | 723-726 |
頁數 | 4 |
出版狀態 | 已發佈 - 2006 |
對外發佈 | 是 |
事件 | 13th International Display Workshops, IDW '06 - Otsu, 日本 持續時間: 2006 12月 6 → 2006 12月 6 |
會議
會議 | 13th International Display Workshops, IDW '06 |
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國家/地區 | 日本 |
城市 | Otsu |
期間 | 2006/12/06 → 2006/12/06 |
ASJC Scopus subject areas
- 電氣與電子工程
- 電子、光磁材料
- 放射學、核子醫學和影像學
- 原子與分子物理與光學