Novel design for a-Si:H TFTs with promising mechanical reliability on flexible substrate

Chen Po-Chiu; Ho King-Yuan; Lee Min-Hung; Cheng Chun-Cheng; Yeh Yung-Hui

Novel design for a-Si:H TFTs with promising mechanical reliability on flexible substrate

Chen Po-Chiu^*, Ho King-Yuan, Lee Min-Hung, Cheng Chun-Cheng, Yeh Yung-Hui

^*此作品的通信作者

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

摘要

In this paper, we investigated several kinds of a-Si:H TFTs structures fabricated on polyimide (PI) substrate at 160 °C under 1×10 ⁴ cycles of mechanical bending stress. After mechanical bending stress, the threshold voltage of different a-Si:H TFTs structures have different shift. It is a critical task to optimize suitable design for a-Si:H TFTs on flexible substrate. L-shape design a-Si:H TFTs with better stability after bending stress. It is a good candidate for the SOP or pixel array on flexible substrate.

原文	英語
頁面	723-726
頁數	4
出版狀態	已發佈 - 2006
對外發佈	是
事件	13th International Display Workshops, IDW '06 - Otsu, 日本持續時間: 2006 12月 6 → 2006 12月 6

會議

會議	13th International Display Workshops, IDW '06
國家/地區	日本
城市	Otsu
期間	2006/12/06 → 2006/12/06

ASJC Scopus subject areas

電氣與電子工程
電子、光磁材料
放射學、核子醫學和影像學
原子與分子物理與光學

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引用此

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abstract = "In this paper, we investigated several kinds of a-Si:H TFTs structures fabricated on polyimide (PI) substrate at 160 °C under 1×10 4 cycles of mechanical bending stress. After mechanical bending stress, the threshold voltage of different a-Si:H TFTs structures have different shift. It is a critical task to optimize suitable design for a-Si:H TFTs on flexible substrate. L-shape design a-Si:H TFTs with better stability after bending stress. It is a good candidate for the SOP or pixel array on flexible substrate.",

author = "Chen Po-Chiu and Ho King-Yuan and Lee Min-Hung and Cheng Chun-Cheng and Yeh Yung-Hui",

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AU - Po-Chiu, Chen

AU - King-Yuan, Ho

AU - Min-Hung, Lee

AU - Chun-Cheng, Cheng

AU - Yung-Hui, Yeh

PY - 2006

Y1 - 2006

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AB - In this paper, we investigated several kinds of a-Si:H TFTs structures fabricated on polyimide (PI) substrate at 160 °C under 1×10 4 cycles of mechanical bending stress. After mechanical bending stress, the threshold voltage of different a-Si:H TFTs structures have different shift. It is a critical task to optimize suitable design for a-Si:H TFTs on flexible substrate. L-shape design a-Si:H TFTs with better stability after bending stress. It is a good candidate for the SOP or pixel array on flexible substrate.

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ER -

Novel design for a-Si:H TFTs with promising mechanical reliability on flexible substrate

摘要

會議

ASJC Scopus subject areas

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