Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications

Min Hung Lee, Jun Dao Luo, Chih Ching Cheng, Jian Shiou Huang, Yu Lun Chueh, Chih Wei Chen, Tai Yuan Wu, Yu Sheng Chen, Heng Yuan Lee, Fred Chen, Ming Jinn Tsai

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

The advantage of a nonlinear bidirectional selector is its high access ratio with multiple transport mechanisms in a wide bias range. The multilayer structure of TiN/Al2O3/TiO2/Al 2O3/Ti with a nonlinear varistor characteristic is proposed. The features of the structure include its low-temperature process (~250°C) for stackable applications, non-requirement of rare materials such as Pt, and its high access ratio (~3200). The varistor characteristic of the nonlinear selector is discussed and attributed to carrier tunneling and thermionic emission for small biases (OFF state) and large biases (ON state), respectively. The selector shows scaling feasibility owing to its property of inertness to SiO2 encapsulation and is compatible with the current IC and memory industry.

原文英語
文章編號08LE03
期刊Japanese Journal of Applied Physics
53
發行號8 SPEC. ISSUE 1
DOIs
出版狀態已發佈 - 2014 八月

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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