@article{68afd540ccc140e88d8c6ce4e8e3d552,
title = "Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications",
abstract = "FeFETs with 5-nm-Thick Hf0.5Zr0.5O2 (HZO) have been demonstrated in memory operations for the ON/OFF current ratio >104 at zero gate voltage and a memory window (MW) of 0.6-0.7 V. A gradual transition of the ferroelectricity with an increasing crystallization temperature for the gate-last process was presented. The excellent data retention are the ∼2×104 ON/OFF ratio and 0.67 V extrapolated to ten years with VP/E = ±4.8 V. The MW remains >0.2 V after 106 cycles for read and vanishes with cycles of 103-104 for write, which is the bottleneck for ferroelectric (FE)-Type memories. The mechanism of retention and endurance is discussed. The characteristic of this letter is an unaffected coercive-field (1 MV/cm) with scaling FE-HZO down to 5-nm thickness, which is beneficial for reducing the operation voltage. A comparable performance with thick HZO (>5 nm) on high data retention and endurance with low voltage for read is achieved. The ultrathin FE layer proposes a realistic emerging memory for 1T architecture.",
keywords = "Memory, endurance, ferroelectric, retention",
author = "Chen, {K. T.} and Chen, {H. Y.} and Liao, {C. Y.} and Siang, {G. Y.} and C. Lo and Liao, {M. H.} and Li, {K. S.} and Chang, {S. T.} and Lee, {M. H.}",
note = "Funding Information: Manuscript received January 2, 2019; revised January 20, 2019; accepted January 24, 2019. Date of publication January 31, 2019; date of current version March 6, 2019. This work was supported in part by the Ministry of Science and Technology (MOST) under Grant 107-2622-8-002-018 and Grant 107-2218-E-003-004 and in part by the Industrial Technology Research Institute (ITRI). The review of this letter was arranged by Editor G. Han. (Corresponding author: M. H. Lee.) K.-T. Chen is with the Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan, and also with the Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan. Funding Information: This work was supported in part by the Ministry of Science and Technology (MOST) under Grant 107-2622-8-002-018 and Grant 107-2218-E-003-004 Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2019",
month = mar,
doi = "10.1109/LED.2019.2896231",
language = "English",
volume = "40",
pages = "399--402",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}