Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications

K. T. Chen, H. Y. Chen, C. Y. Liao, G. Y. Siang, C. Lo, M. H. Liao, K. S. Li, S. T. Chang, M. H. Lee*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

27 引文 斯高帕斯(Scopus)

摘要

FeFETs with 5-nm-Thick Hf0.5Zr0.5O2 (HZO) have been demonstrated in memory operations for the ON/OFF current ratio >104 at zero gate voltage and a memory window (MW) of 0.6-0.7 V. A gradual transition of the ferroelectricity with an increasing crystallization temperature for the gate-last process was presented. The excellent data retention are the ∼2×104 ON/OFF ratio and 0.67 V extrapolated to ten years with VP/E = ±4.8 V. The MW remains >0.2 V after 106 cycles for read and vanishes with cycles of 103-104 for write, which is the bottleneck for ferroelectric (FE)-Type memories. The mechanism of retention and endurance is discussed. The characteristic of this letter is an unaffected coercive-field (1 MV/cm) with scaling FE-HZO down to 5-nm thickness, which is beneficial for reducing the operation voltage. A comparable performance with thick HZO (>5 nm) on high data retention and endurance with low voltage for read is achieved. The ultrathin FE layer proposes a realistic emerging memory for 1T architecture.

原文英語
文章編號8630859
頁(從 - 到)399-402
頁數4
期刊IEEE Electron Device Letters
40
發行號3
DOIs
出版狀態已發佈 - 2019 三月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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