Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

Jyi Tsong Lin*, Kuo Dong Huang, Shu Fen Hu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)

摘要

In this paper, a polycrystalline silicon (polysilicon) thin-film transistor with a block oxide enclosing body, BTFT, is fabricated and investigated. By utilizing the block-oxide structure of thin-film transistors, the BTFT is shown to suppress the short channel effect. This proposed structure is formed by burying self-aligned oxide spacers along the sidewalls of the source and drain junctions, which reduces the P-N junction area, thereby reducing the junction capacitance and leakage current. Measurements demonstrate that the BTFT eliminates the punch-through effect even down to gate lengths of 1.5 νm, whereas the conventional TFT suffers serious short channel effects at this gate length.

原文英語
文章編號075007
期刊Semiconductor Science and Technology
23
發行號7
DOIs
出版狀態已發佈 - 2008 7月 1
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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