NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides

Yu Chen Chen, Kuo Yu Hsiang, Min Hung Lee, Pin Su

研究成果: 書貢獻/報告類型會議論文篇章

摘要

In this work, we have conducted an NLS-based modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf1-xZrxO2 (HZO) under low temperatures down to 80K. We have shown that the temperature-dependent phase transition behavior of the AFE/FE HZO, which is responsible for the observed temperature dependence of polarization, can be captured by our generalized NLS model. Our study indicates that the distributions of the back-switching field and the effective activation field and their distinct temperature dependences are crucial. Our model is important for HZO with certain AFE and FE properties, which can be beneficial for future memory applications.

原文英語
主出版物標題2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350334166
DOIs
出版狀態已發佈 - 2023
事件2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, 臺灣
持續時間: 2023 4月 172023 4月 20

出版系列

名字2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

會議

會議2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
國家/地區臺灣
城市Hsinchu
期間2023/04/172023/04/20

ASJC Scopus subject areas

  • 人工智慧
  • 電腦網路與通信
  • 電腦科學應用
  • 硬體和架構
  • 資訊系統
  • 電氣與電子工程

指紋

深入研究「NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides」主題。共同形成了獨特的指紋。

引用此