Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x

W. K. Hung; K. S. Cho; M. Y. Chern; Y. F. Chen; D. K. Shih; H. H. Lin; C. C. Lu; T. R. Yang

doi:10.1063/1.1436524

Nitrogen-induced enhancement of the electron effective mass in InN _xAs_1-x

W. K. Hung, K. S. Cho, M. Y. Chern, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, T. R. Yang

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

28 引文斯高帕斯（Scopus）

摘要

The electron effective mass in n-type InN_xAs_1-x (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the "universality" of the BAC model.

原文	英語
頁（從 - 到）	796-798
頁數	3
期刊	Applied Physics Letters
卷	80
發行號	5
DOIs	https://doi.org/10.1063/1.1436524
出版狀態	已發佈 - 2002 2月 4

ASJC Scopus subject areas

物理與天文學（雜項）

存取文件

10.1063/1.1436524

其它文件與鏈接

引用此

@article{8f6c55e2fdfb45d2802910f04cb51307,

title = "Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x",

abstract = "The electron effective mass in n-type InNxAs1-x (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the {"}universality{"} of the BAC model.",

author = "Hung, {W. K.} and Cho, {K. S.} and Chern, {M. Y.} and Chen, {Y. F.} and Shih, {D. K.} and Lin, {H. H.} and Lu, {C. C.} and Yang, {T. R.}",

year = "2002",

month = feb,

day = "4",

doi = "10.1063/1.1436524",

language = "English",

volume = "80",

pages = "796--798",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x

AU - Hung, W. K.

AU - Cho, K. S.

AU - Chern, M. Y.

AU - Chen, Y. F.

AU - Shih, D. K.

AU - Lin, H. H.

AU - Lu, C. C.

AU - Yang, T. R.

PY - 2002/2/4

Y1 - 2002/2/4

N2 - The electron effective mass in n-type InNxAs1-x (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the "universality" of the BAC model.

AB - The electron effective mass in n-type InNxAs1-x (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the "universality" of the BAC model.

UR - http://www.scopus.com/inward/record.url?scp=79956036611&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956036611&partnerID=8YFLogxK

U2 - 10.1063/1.1436524

DO - 10.1063/1.1436524

M3 - Article

AN - SCOPUS:79956036611

SN - 0003-6951

VL - 80

SP - 796

EP - 798

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此

Nitrogen-induced enhancement of the electron effective mass in InN _xAs_1-x