Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x

W. K. Hung, K. S. Cho, M. Y. Chern, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, T. R. Yang

研究成果: 雜誌貢獻期刊論文同行評審

27 引文 斯高帕斯(Scopus)

摘要

The electron effective mass in n-type InNxAs1-x (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the "universality" of the BAC model.

原文英語
頁(從 - 到)796-798
頁數3
期刊Applied Physics Letters
80
發行號5
DOIs
出版狀態已發佈 - 2002 2月 4
對外發佈

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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