Nitrogen-doped tungsten oxide nanowires: Low-temperature synthesis on Si, and electrical, optical, and field-emission properties

Mu Tung Chang, Li Jen Chou, Yu Lun Chueh, Yu Chen Lee, Chin Hua Hsieh, Chii Dong Chen, Yann Wen Lan, Lih Juann Chen

研究成果: 雜誌貢獻期刊論文同行評審

94 引文 斯高帕斯(Scopus)

摘要

Very dense and uniformly distributed nitrogen-doped tungsten oxide (WO 3) nanowires were synthesized successfully on a 4-inch Si(100) wafer at low temperature. The nanowires were of lengths extending up to 5 μm and diameters ranging from 25 to 35 nm. The highest aspect ratio was estimated to be about 200. An emission peak at 470 nm was found by photoluminescence measurement at room temperature. The suggested growth mechanism of the nanowires is vapor-solid growth, in which gaseous ammonia plays a significant role to reduce the formation temperature. The approach has proved to be a reliable way to produce nitrogen-doped WO3 nanowires on Si in large quantities. The direct fabrication of WO3-based nanodevices on Si has been demonstrated.

原文英語
頁(從 - 到)658-664
頁數7
期刊Small
3
發行號4
DOIs
出版狀態已發佈 - 2007 四月 1
對外發佈Yes

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

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