Ni/GeOx/TiOy/TaN RRAM on flexible substrate with excellent resistance distribution

K. I. Chou; C. H. Cheng; Z. W. Zheng; Ming Liu; Albert Chin

doi:10.1109/LED.2013.2243814

Ni/GeO_x/TiO_y/TaN RRAM on flexible substrate with excellent resistance distribution

K. I. Chou^*
, C. H. Cheng
, Z. W. Zheng
, Ming Liu
, Albert Chin

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

46 引文斯高帕斯（Scopus）

摘要

Excellent device-to-device distribution was achieved in high-performance Ni/GeO_x/TiO_y/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9μA at 3 V;-1μA at-3 V), 10⁵ cycling endurance, and good retention at 85 °C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.

原文	英語
文章編號	6471736
頁（從 - 到）	505-507
頁數	3
期刊	IEEE Electron Device Letters
卷	34
發行號	4
DOIs	https://doi.org/10.1109/LED.2013.2243814
出版狀態	已發佈 - 2013

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

存取文件

10.1109/LED.2013.2243814

其它文件與鏈接

引用此

@article{9317082af8684fcb967d7a45df91f32a,

title = "Ni/GeOx/TiOy/TaN RRAM on flexible substrate with excellent resistance distribution",

abstract = "Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9μA at 3 V;-1μA at-3 V), 105 cycling endurance, and good retention at 85 °C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.",

keywords = "Flexible electronics, GeO, TiO, resistive random access memory (RRAM)",

author = "Chou, \{K. I.\} and Cheng, \{C. H.\} and Zheng, \{Z. W.\} and Ming Liu and Albert Chin",

year = "2013",

doi = "10.1109/LED.2013.2243814",

language = "English",

volume = "34",

pages = "505--507",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Ni/GeOx/TiOy/TaN RRAM on flexible substrate with excellent resistance distribution

AU - Chou, K. I.

AU - Cheng, C. H.

AU - Zheng, Z. W.

AU - Liu, Ming

AU - Chin, Albert

PY - 2013

Y1 - 2013

N2 - Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9μA at 3 V;-1μA at-3 V), 105 cycling endurance, and good retention at 85 °C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.

AB - Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9μA at 3 V;-1μA at-3 V), 105 cycling endurance, and good retention at 85 °C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.

KW - Flexible electronics

KW - GeO

KW - TiO

KW - resistive random access memory (RRAM)

UR - https://www.scopus.com/pages/publications/84875663685

UR - https://www.scopus.com/pages/publications/84875663685#tab=citedBy

U2 - 10.1109/LED.2013.2243814

DO - 10.1109/LED.2013.2243814

M3 - Article

AN - SCOPUS:84875663685

SN - 0741-3106

VL - 34

SP - 505

EP - 507

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

M1 - 6471736

ER -

Ni/GeOx/TiOy/TaN RRAM on flexible substrate with excellent resistance distribution

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此

Ni/GeO_x/TiO_y/TaN RRAM on flexible substrate with excellent resistance distribution