摘要
Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9μA at 3 V;-1μA at-3 V), 105 cycling endurance, and good retention at 85 °C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.
原文 | 英語 |
---|---|
文章編號 | 6471736 |
頁(從 - 到) | 505-507 |
頁數 | 3 |
期刊 | IEEE Electron Device Letters |
卷 | 34 |
發行號 | 4 |
DOIs | |
出版狀態 | 已發佈 - 2013 |
ASJC Scopus subject areas
- 電子、光磁材料
- 電氣與電子工程