Ni/GeOx/TiOy/TaN RRAM on flexible substrate with excellent resistance distribution

K. I. Chou*, C. H. Cheng, Z. W. Zheng, Ming Liu, Albert Chin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

37 引文 斯高帕斯(Scopus)

摘要

Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9μA at 3 V;-1μA at-3 V), 105 cycling endurance, and good retention at 85 °C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.

原文英語
文章編號6471736
頁(從 - 到)505-507
頁數3
期刊IEEE Electron Device Letters
34
發行號4
DOIs
出版狀態已發佈 - 2013

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

指紋

深入研究「Ni/GeO<sub>x</sub>/TiO<sub>y</sub>/TaN RRAM on flexible substrate with excellent resistance distribution」主題。共同形成了獨特的指紋。

引用此