Nickel Schottky junction on epi-Ge for strained Ge metal-oxide- semiconductor field-effect transistors source/drain engineering

M. H. Lee*, B. F. Hsieh, S. T. Chang, S. W. Lee

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this study, the nano-scale epi-Ge/Si fabrication and the Schottky junction source/drain manufacture with Ni incorporation are demonstrated. The Ni Schottky junction formation by laser annealing (LA) and rapid thermal annealing, as well as the barrier height and interface characteristics, are discussed. Improvement in the density of interface trap (D it) can be achieved by LA; this technology enhances the opportunity of high Ge concentration SiGe channel to play a part in the next-generation complementary metal-oxide-semiconductor applications.

原文英語
頁(從 - 到)3379-3381
頁數3
期刊Thin Solid Films
520
發行號8
DOIs
出版狀態已發佈 - 2012 二月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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