A surface plasmon (SP) based anode hole injection model for gate oxide degradation/breakdown is presented. This model proposes that the hole trapping in the oxide is mainly due to injected holes from the anode that are generated by the decay of the SP's to electron-hole pairs at the anode interface, finally resulting in oxide breakdown when the trapped positive charge accumulates to a critical value. The surface plasmon excitation energy is shown to decrease with increasing temperature, which in turn causes the positive charge generation to increase and the charge to breakdown to decrease.
|出版狀態||已發佈 - 1998|
|事件||Proceedings of the 1998 IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA|
持續時間: 1998 10月 12 → 1998 10月 15
|其他||Proceedings of the 1998 IEEE International Integrated Reliability Workshop|
|城市||Lake Tahoe, CA, USA|
|期間||1998/10/12 → 1998/10/15|
ASJC Scopus subject areas