New mechanism for gate oxide degradation and its applications

Chuan H. Liu*, K. Y. Fu, Thomas A. DeMassa, Julian J. Sanchez

*此作品的通信作者

研究成果: 會議貢獻類型會議論文同行評審

摘要

A surface plasmon (SP) based anode hole injection model for gate oxide degradation/breakdown is presented. This model proposes that the hole trapping in the oxide is mainly due to injected holes from the anode that are generated by the decay of the SP's to electron-hole pairs at the anode interface, finally resulting in oxide breakdown when the trapped positive charge accumulates to a critical value. The surface plasmon excitation energy is shown to decrease with increasing temperature, which in turn causes the positive charge generation to increase and the charge to breakdown to decrease.

原文英語
頁面68-71
頁數4
出版狀態已發佈 - 1998
對外發佈
事件Proceedings of the 1998 IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA
持續時間: 1998 十月 121998 十月 15

其他

其他Proceedings of the 1998 IEEE International Integrated Reliability Workshop
城市Lake Tahoe, CA, USA
期間1998/10/121998/10/15

ASJC Scopus subject areas

  • 電氣與電子工程
  • 工業與製造工程

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