New mechanism for gate oxide degradation and its applications

Chuan H. Liu; K. Y. Fu; Thomas A. DeMassa; Julian J. Sanchez

New mechanism for gate oxide degradation and its applications

Chuan H. Liu^*, K. Y. Fu, Thomas A. DeMassa, Julian J. Sanchez

^*此作品的通信作者

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

摘要

A surface plasmon (SP) based anode hole injection model for gate oxide degradation/breakdown is presented. This model proposes that the hole trapping in the oxide is mainly due to injected holes from the anode that are generated by the decay of the SP's to electron-hole pairs at the anode interface, finally resulting in oxide breakdown when the trapped positive charge accumulates to a critical value. The surface plasmon excitation energy is shown to decrease with increasing temperature, which in turn causes the positive charge generation to increase and the charge to breakdown to decrease.

原文	英語
頁面	68-71
頁數	4
出版狀態	已發佈 - 1998
對外發佈	是
事件	Proceedings of the 1998 IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA 持續時間: 1998 10月 12 → 1998 10月 15

其他

其他	Proceedings of the 1998 IEEE International Integrated Reliability Workshop
城市	Lake Tahoe, CA, USA
期間	1998/10/12 → 1998/10/15

ASJC Scopus subject areas

電氣與電子工程
工業與製造工程

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引用此

@conference{8e542b15610d4b31bf4a941bc679b7ec,

title = "New mechanism for gate oxide degradation and its applications",

abstract = "A surface plasmon (SP) based anode hole injection model for gate oxide degradation/breakdown is presented. This model proposes that the hole trapping in the oxide is mainly due to injected holes from the anode that are generated by the decay of the SP's to electron-hole pairs at the anode interface, finally resulting in oxide breakdown when the trapped positive charge accumulates to a critical value. The surface plasmon excitation energy is shown to decrease with increasing temperature, which in turn causes the positive charge generation to increase and the charge to breakdown to decrease.",

author = "Liu, {Chuan H.} and Fu, {K. Y.} and DeMassa, {Thomas A.} and Sanchez, {Julian J.}",

year = "1998",

language = "English",

pages = "68--71",

note = "Proceedings of the 1998 IEEE International Integrated Reliability Workshop ; Conference date: 12-10-1998 Through 15-10-1998",

}

TY - CONF

T1 - New mechanism for gate oxide degradation and its applications

AU - Liu, Chuan H.

AU - Fu, K. Y.

AU - DeMassa, Thomas A.

AU - Sanchez, Julian J.

PY - 1998

Y1 - 1998

N2 - A surface plasmon (SP) based anode hole injection model for gate oxide degradation/breakdown is presented. This model proposes that the hole trapping in the oxide is mainly due to injected holes from the anode that are generated by the decay of the SP's to electron-hole pairs at the anode interface, finally resulting in oxide breakdown when the trapped positive charge accumulates to a critical value. The surface plasmon excitation energy is shown to decrease with increasing temperature, which in turn causes the positive charge generation to increase and the charge to breakdown to decrease.

AB - A surface plasmon (SP) based anode hole injection model for gate oxide degradation/breakdown is presented. This model proposes that the hole trapping in the oxide is mainly due to injected holes from the anode that are generated by the decay of the SP's to electron-hole pairs at the anode interface, finally resulting in oxide breakdown when the trapped positive charge accumulates to a critical value. The surface plasmon excitation energy is shown to decrease with increasing temperature, which in turn causes the positive charge generation to increase and the charge to breakdown to decrease.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032315958&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032315958

SP - 68

EP - 71

T2 - Proceedings of the 1998 IEEE International Integrated Reliability Workshop

Y2 - 12 October 1998 through 15 October 1998

ER -

New mechanism for gate oxide degradation and its applications

摘要

其他

ASJC Scopus subject areas

其它文件與鏈接

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