New experimental findings on SILC and SBD of ultra-thin gate oxides

M. G. Chen*, Chuan H. Liu, Ming T. Lee, K. Y. Fu

*此作品的通信作者

研究成果: 會議貢獻類型會議論文同行評審

摘要

It is widely believed that stress-induced leakage current (SILC) and soft breakdown (SBD) of ultra-thin (tox <5 nm) gate oxides are due to trap-assisted tunneling (TAT). In this paper, through the use of carrier separation method and annealing experiments, we argue that SILC is not only contributed by trap-assisted tunneling of conduction band electrons but also by trap-assisted tunneling of valence band electrons. It is proposed in this paper that the traps are mainly donor-like.

原文英語
頁面114-117
頁數4
出版狀態已發佈 - 1999
對外發佈
事件1999 IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA
持續時間: 1999 十月 181999 十月 21

其他

其他1999 IEEE International Integrated Reliability Workshop
城市Lake Tahoe, CA, USA
期間1999/10/181999/10/21

ASJC Scopus subject areas

  • 電氣與電子工程
  • 工業與製造工程

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