It is widely believed that stress-induced leakage current (SILC) and soft breakdown (SBD) of ultra-thin (tox <5 nm) gate oxides are due to trap-assisted tunneling (TAT). In this paper, through the use of carrier separation method and annealing experiments, we argue that SILC is not only contributed by trap-assisted tunneling of conduction band electrons but also by trap-assisted tunneling of valence band electrons. It is proposed in this paper that the traps are mainly donor-like.
|出版狀態||已發佈 - 1999|
|事件||1999 IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA|
持續時間: 1999 10月 18 → 1999 10月 21
|其他||1999 IEEE International Integrated Reliability Workshop|
|城市||Lake Tahoe, CA, USA|
|期間||1999/10/18 → 1999/10/21|
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