Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Kai Shin Li; Yun Jie Wei; Yi Ju Chen; Wen Cheng Chiu; Hsiu Chih Chen; Min Hung Lee; Yu Fan Chiu; Fu Kuo Hsueh; Bo Wei Wu; Pin Guang Chen; Tung Yan Lai; Chun Chi Chen; Jia Min Shieh; Wen Kuan Yeh; Sayeef Salahuddin; Chenming Hu

doi:10.1109/IEDM.2018.8614521

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Kai Shin Li
, Yun Jie Wei
, Yi Ju Chen
, Wen Cheng Chiu
, Hsiu Chih Chen
, Min Hung Lee
, Yu Fan Chiu
, Fu Kuo Hsueh
, Bo Wei Wu
, Pin Guang Chen
, Tung Yan Lai
, Chun Chi Chen
, Jia Min Shieh
, Wen Kuan Yeh
, Sayeef Salahuddin
, Chenming Hu

光電工程研究所暨學士學位學程

研究成果: 書貢獻/報告類型 › 會議論文篇章

32 引文斯高帕斯（Scopus）

摘要

In this work, we use thermal-ALD to prepare ferroelectric HfZrO₂ (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I_D. Lower thermal budget process, CO₂ far-infrared laser activation and 400°C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO₂ gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (F_t) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.

原文	英語
主出版物標題	2018 IEEE International Electron Devices Meeting, IEDM 2018
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	31.7.1-31.7.4
ISBN（電子）	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614521
出版狀態	已發佈 - 2018 7月 2
事件	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, 美国持續時間: 2018 12月 1 → 2018 12月 5

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2018-December
ISSN（列印）	0163-1918

會議

會議	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
國家/地區	美国
城市	San Francisco
期間	2018/12/01 → 2018/12/05

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

存取文件

10.1109/IEDM.2018.8614521

其它文件與鏈接

引用此

Li, K. S., Wei, Y. J., Chen, Y. J., Chiu, W. C., Chen, H. C., Lee, M. H., Chiu, Y. F., Hsueh, F. K., Wu, B. W., Chen, P. G., Lai, T. Y., Chen, C. C., Shieh, J. M., Yeh, W. K., Salahuddin, S., & Hu, C. (2018). Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft. 於 2018 IEEE International Electron Devices Meeting, IEDM 2018 (頁 31.7.1-31.7.4). 文章 8614521 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614521

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft. / Li, Kai Shin; Wei, Yun Jie; Chen, Yi Ju 等.
2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 31.7.1-31.7.4 8614521 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Li, KS, Wei, YJ, Chen, YJ, Chiu, WC, Chen, HC, Lee, MH, Chiu, YF, Hsueh, FK, Wu, BW, Chen, PG, Lai, TY, Chen, CC, Shieh, JM, Yeh, WK, Salahuddin, S & Hu, C 2018, Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft. 於 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614521, Technical Digest - International Electron Devices Meeting, IEDM, 卷 2018-December, Institute of Electrical and Electronics Engineers Inc., 頁 31.7.1-31.7.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, 美国, 2018/12/01. https://doi.org/10.1109/IEDM.2018.8614521

Li KS, Wei YJ, Chen YJ, Chiu WC, Chen HC, Lee MH 等. Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft. 於 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 31.7.1-31.7.4. 8614521. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2018.8614521

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abstract = "In this work, we use thermal-ALD to prepare ferroelectric HfZrO2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of ID. Lower thermal budget process, CO2 far-infrared laser activation and 400°C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77\% higher voltage gain compared to FinFET-inverter employing HfO2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (Ft) frequency is measured, 23.1 GHz or 23\% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.",

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AU - Chen, Hsiu Chih

AU - Lee, Min Hung

AU - Chiu, Yu Fan

AU - Hsueh, Fu Kuo

AU - Wu, Bo Wei

AU - Chen, Pin Guang

AU - Lai, Tung Yan

AU - Chen, Chun Chi

AU - Shieh, Jia Min

AU - Yeh, Wen Kuan

AU - Salahuddin, Sayeef

AU - Hu, Chenming

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AB - In this work, we use thermal-ALD to prepare ferroelectric HfZrO2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of ID. Lower thermal budget process, CO2 far-infrared laser activation and 400°C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (Ft) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.

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Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

摘要

出版系列

會議

ASJC Scopus subject areas

存取文件

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