Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Kai Shin Li; Yun Jie Wei; Yi Ju Chen; Wen Cheng Chiu; Hsiu Chih Chen; Min Hung Lee; Yu Fan Chiu; Fu Kuo Hsueh; Bo Wei Wu; Pin Guang Chen; Tung Yan Lai; Chun Chi Chen; Jia Min Shieh; Wen Kuan Yeh; Sayeef Salahuddin; Chenming Hu

doi:10.1109/IEDM.2018.8614521

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Kai Shin Li, Yun Jie Wei, Yi Ju Chen, Wen Cheng Chiu, Hsiu Chih Chen, Min Hung Lee, Yu Fan Chiu, Fu Kuo Hsueh, Bo Wei Wu, Pin Guang Chen, Tung Yan Lai, Chun Chi Chen, Jia Min Shieh, Wen Kuan Yeh, Sayeef Salahuddin, Chenming Hu

光電工程學士學位學程

研究成果: 書貢獻/報告類型 › 會議論文篇章

14 引文斯高帕斯（Scopus）

摘要

In this work, we use thermal-ALD to prepare ferroelectric HfZrO ₂ (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I _D . Lower thermal budget process, CO ₂ far-infrared laser activation and 400°C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO ₂ gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (F _t ) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.

原文	英語
主出版物標題	2018 IEEE International Electron Devices Meeting, IEDM 2018
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	31.7.1-31.7.4
ISBN（電子）	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614521
出版狀態	已發佈 - 2019 1月 16
事件	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, 美国持續時間: 2018 12月 1 → 2018 12月 5

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2018-December
ISSN（列印）	0163-1918

會議

會議	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
國家/地區	美国
城市	San Francisco
期間	2018/12/01 → 2018/12/05

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

存取文件

10.1109/IEDM.2018.8614521

其它文件與鏈接

引用此

Li, K. S., Wei, Y. J., Chen, Y. J., Chiu, W. C., Chen, H. C., Lee, M. H., Chiu, Y. F., Hsueh, F. K., Wu, B. W., Chen, P. G., Lai, T. Y., Chen, C. C., Shieh, J. M., Yeh, W. K., Salahuddin, S., & Hu, C. (2019). Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft. 於 2018 IEEE International Electron Devices Meeting, IEDM 2018 (頁 31.7.1-31.7.4). [8614521] (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614521

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft. / Li, Kai Shin; Wei, Yun Jie; Chen, Yi Ju 等.

2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 31.7.1-31.7.4 8614521 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Li, KS, Wei, YJ, Chen, YJ, Chiu, WC, Chen, HC, Lee, MH, Chiu, YF, Hsueh, FK, Wu, BW, Chen, PG, Lai, TY, Chen, CC, Shieh, JM, Yeh, WK, Salahuddin, S & Hu, C 2019, Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft. 於 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614521, Technical Digest - International Electron Devices Meeting, IEDM, 卷 2018-December, Institute of Electrical and Electronics Engineers Inc., 頁 31.7.1-31.7.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, 美国, 2018/12/01. https://doi.org/10.1109/IEDM.2018.8614521

Li KS, Wei YJ, Chen YJ, Chiu WC, Chen HC, Lee MH 等. Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft. 於 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc. 2019. p. 31.7.1-31.7.4. 8614521. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2018.8614521

@inproceedings{9992dacb023d4d3ab27903f308670fae,

title = "Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft",

abstract = " In this work, we use thermal-ALD to prepare ferroelectric HfZrO 2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I D . Lower thermal budget process, CO 2 far-infrared laser activation and 400°C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO 2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (F t ) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin. ",

author = "Li, {Kai Shin} and Wei, {Yun Jie} and Chen, {Yi Ju} and Chiu, {Wen Cheng} and Chen, {Hsiu Chih} and Lee, {Min Hung} and Chiu, {Yu Fan} and Hsueh, {Fu Kuo} and Wu, {Bo Wei} and Chen, {Pin Guang} and Lai, {Tung Yan} and Chen, {Chun Chi} and Shieh, {Jia Min} and Yeh, {Wen Kuan} and Sayeef Salahuddin and Chenming Hu",

note = "Funding Information: This work was performed by the National Nano Device Laboratories facilities and supported by the National Science ! $ Semiconductor Nano-{"} {"} & The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. References [1] K.-S. Li et al., in IEDM Tech. Dig., 2015, pp. 620-623. [2] Daewoong Kwon, Yu-Hung Liao, Yen-Kai Lin, Juan Pablo Duarte, Korok Chatterjee, Ava J. Tan, Ajay K. Yadav, Chenming Hu, Zoran Krivokapic and Sayeef Salahuddin, in VLSI-Tech, T05-3, 2018. [3] Zoran Krivokapic et al., in IEDM Tech Dig. 2017, 15.1.1 [4] Sayeef Salahuddin and Supriyo Datta, Nano Letters Vol. 8, pp. 405-410, 2008. [5] Patrick Polakowski and Johannes Mouller, APPLIED PHYSICS LETTERS 106, 232905 (2015) [6] M. H. Lee1, P.-G. Chen, C. Liu, K-Y. Chu, C.-C. Cheng, M.-J. Xi, S.-N. Liu, J.-W. Lee, S.-J. Huang, M.-H. Liao, M. Tang, K.-S. Li and M.-C. Chen, in IEDM Tech. Dig., 2016, 12.1 [7] Chenming Hu, Sayeef Salahuddin, Cheng-I Lin, Asif Khan, in Device Research Conference (DRC), pp. 39-40, 2015. [8] M.-C. Chen, C.-H. Lin, Y.-F. Hou, Y.-J. Chen, C.-Y. Lin, F.-K. Hsueh, H.-L. Liu, C.-T. Liu, B.-W. Wang, H.-C. Chen, C.-C. Chen, S.-H. Chen, C.-T. Wu, T.-Y. Lai, M.-Y. Lee, B.-W. Wu, C.-S. Wu, I. Yang, Y.-P. Hsieh, C.H. Ho, T. Wang, A.B. Sachid, C. Hu and F.-L. Yang, in VLSI Symp. Tech. Dig., 2013, pp. 218 219, 2013. [9] Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Shinji Migita, and Akira Toriumi, in IEDM Tech. Dig., 2016, 12. Publisher Copyright: {\textcopyright} 2018 IEEE.; 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 ; Conference date: 01-12-2018 Through 05-12-2018",

year = "2019",

month = jan,

day = "16",

doi = "10.1109/IEDM.2018.8614521",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "31.7.1--31.7.4",

booktitle = "2018 IEEE International Electron Devices Meeting, IEDM 2018",

}

TY - GEN

T1 - Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

AU - Li, Kai Shin

AU - Wei, Yun Jie

AU - Chen, Yi Ju

AU - Chiu, Wen Cheng

AU - Chen, Hsiu Chih

AU - Lee, Min Hung

AU - Chiu, Yu Fan

AU - Hsueh, Fu Kuo

AU - Wu, Bo Wei

AU - Chen, Pin Guang

AU - Lai, Tung Yan

AU - Chen, Chun Chi

AU - Shieh, Jia Min

AU - Yeh, Wen Kuan

AU - Salahuddin, Sayeef

AU - Hu, Chenming

N1 - Funding Information: This work was performed by the National Nano Device Laboratories facilities and supported by the National Science ! $ Semiconductor Nano-" " & The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. References [1] K.-S. Li et al., in IEDM Tech. Dig., 2015, pp. 620-623. [2] Daewoong Kwon, Yu-Hung Liao, Yen-Kai Lin, Juan Pablo Duarte, Korok Chatterjee, Ava J. Tan, Ajay K. Yadav, Chenming Hu, Zoran Krivokapic and Sayeef Salahuddin, in VLSI-Tech, T05-3, 2018. [3] Zoran Krivokapic et al., in IEDM Tech Dig. 2017, 15.1.1 [4] Sayeef Salahuddin and Supriyo Datta, Nano Letters Vol. 8, pp. 405-410, 2008. [5] Patrick Polakowski and Johannes Mouller, APPLIED PHYSICS LETTERS 106, 232905 (2015) [6] M. H. Lee1, P.-G. Chen, C. Liu, K-Y. Chu, C.-C. Cheng, M.-J. Xi, S.-N. Liu, J.-W. Lee, S.-J. Huang, M.-H. Liao, M. Tang, K.-S. Li and M.-C. Chen, in IEDM Tech. Dig., 2016, 12.1 [7] Chenming Hu, Sayeef Salahuddin, Cheng-I Lin, Asif Khan, in Device Research Conference (DRC), pp. 39-40, 2015. [8] M.-C. Chen, C.-H. Lin, Y.-F. Hou, Y.-J. Chen, C.-Y. Lin, F.-K. Hsueh, H.-L. Liu, C.-T. Liu, B.-W. Wang, H.-C. Chen, C.-C. Chen, S.-H. Chen, C.-T. Wu, T.-Y. Lai, M.-Y. Lee, B.-W. Wu, C.-S. Wu, I. Yang, Y.-P. Hsieh, C.H. Ho, T. Wang, A.B. Sachid, C. Hu and F.-L. Yang, in VLSI Symp. Tech. Dig., 2013, pp. 218 219, 2013. [9] Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Shinji Migita, and Akira Toriumi, in IEDM Tech. Dig., 2016, 12. Publisher Copyright: © 2018 IEEE.

PY - 2019/1/16

Y1 - 2019/1/16

N2 - In this work, we use thermal-ALD to prepare ferroelectric HfZrO 2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I D . Lower thermal budget process, CO 2 far-infrared laser activation and 400°C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO 2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (F t ) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.

AB - In this work, we use thermal-ALD to prepare ferroelectric HfZrO 2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I D . Lower thermal budget process, CO 2 far-infrared laser activation and 400°C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO 2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (F t ) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.

UR - http://www.scopus.com/inward/record.url?scp=85061838616&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85061838616&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2018.8614521

DO - 10.1109/IEDM.2018.8614521

M3 - Conference contribution

AN - SCOPUS:85061838616

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 31.7.1-31.7.4

BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018

Y2 - 1 December 2018 through 5 December 2018

ER -

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

摘要

出版系列

會議

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此