Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Kai Shin Li, Yun Jie Wei, Yi Ju Chen, Wen Cheng Chiu, Hsiu Chih Chen, Min Hung Lee, Yu Fan Chiu, Fu Kuo Hsueh, Bo Wei Wu, Pin Guang Chen, Tung Yan Lai, Chun Chi Chen, Jia Min Shieh, Wen Kuan Yeh, Sayeef Salahuddin, Chenming Hu

    研究成果: 書貢獻/報告類型會議論文篇章

    6 引文 斯高帕斯(Scopus)

    摘要

    In this work, we use thermal-ALD to prepare ferroelectric HfZrO 2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I D . Lower thermal budget process, CO 2 far-infrared laser activation and 400°C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO 2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (F t ) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.

    原文英語
    主出版物標題2018 IEEE International Electron Devices Meeting, IEDM 2018
    發行者Institute of Electrical and Electronics Engineers Inc.
    頁面31.7.1-31.7.4
    ISBN(電子)9781728119878
    DOIs
    出版狀態已發佈 - 2019 一月 16
    事件64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, 美国
    持續時間: 2018 十二月 12018 十二月 5

    出版系列

    名字Technical Digest - International Electron Devices Meeting, IEDM
    2018-December
    ISSN(列印)0163-1918

    會議

    會議64th Annual IEEE International Electron Devices Meeting, IEDM 2018
    國家美国
    城市San Francisco
    期間2018/12/012018/12/05

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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