Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

M. H. Lee; P. G. Chen; S. T. Fan; C. Y. Kuo; H. H. Chen; S. S. Gu; Y. C. Chou; C. H. Tang; R. C. Hong; Z. Y. Wang; M. H. Liao; K. S. Li; M. C. Chen; C. W. Liu

doi:10.1109/VLSI-TSA.2017.7942466

Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

M. H. Lee^*
, P. G. Chen
, S. T. Fan
, C. Y. Kuo
, H. H. Chen
, S. S. Gu
, Y. C. Chou
, C. H. Tang
, R. C. Hong
, Z. Y. Wang
, M. H. Liao
, K. S. Li
, M. C. Chen
, C. W. Liu

^*此作品的通信作者

光電工程研究所暨學士學位學程

研究成果: 書貢獻/報告類型 › 會議論文篇章

6 引文斯高帕斯（Scopus）

摘要

Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.

原文	英語
主出版物標題	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781509058051
DOIs	https://doi.org/10.1109/VLSI-TSA.2017.7942466
出版狀態	已發佈 - 2017 6月 7
事件	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, 臺灣持續時間: 2017 4月 24 → 2017 4月 27

出版系列

名字	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

其他

其他	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
國家/地區	臺灣
城市	Hsinchu
期間	2017/04/24 → 2017/04/27

ASJC Scopus subject areas

硬體和架構
電氣與電子工程

存取文件

10.1109/VLSI-TSA.2017.7942466

其它文件與鏈接

引用此

Lee, M. H., Chen, P. G., Fan, S. T., Kuo, C. Y., Chen, H. H., Gu, S. S., Chou, Y. C., Tang, C. H., Hong, R. C., Wang, Z. Y., Liao, M. H., Li, K. S., Chen, M. C., & Liu, C. W. (2017). Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide. 於 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 文章 7942466 (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2017.7942466

Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide. / Lee, M. H.; Chen, P. G.; Fan, S. T. 等.
2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7942466 (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Lee, MH, Chen, PG, Fan, ST, Kuo, CY, Chen, HH, Gu, SS, Chou, YC, Tang, CH, Hong, RC, Wang, ZY, Liao, MH, Li, KS, Chen, MC & Liu, CW 2017, Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide. 於 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017., 7942466, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Institute of Electrical and Electronics Engineers Inc., 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Hsinchu, 臺灣, 2017/04/24. https://doi.org/10.1109/VLSI-TSA.2017.7942466

Lee MH, Chen PG, Fan ST, Kuo CY, Chen HH, Gu SS 等. Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide. 於 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7942466. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). doi: 10.1109/VLSI-TSA.2017.7942466

@inproceedings{dba02082613f41ed9175aa55c7bdc92b,

title = "Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide",

abstract = "Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.",

author = "Lee, \{M. H.\} and Chen, \{P. G.\} and Fan, \{S. T.\} and Kuo, \{C. Y.\} and Chen, \{H. H.\} and Gu, \{S. S.\} and Chou, \{Y. C.\} and Tang, \{C. H.\} and Hong, \{R. C.\} and Wang, \{Z. Y.\} and Liao, \{M. H.\} and Li, \{K. S.\} and Chen, \{M. C.\} and Liu, \{C. W.\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 ; Conference date: 24-04-2017 Through 27-04-2017",

year = "2017",

month = jun,

day = "7",

doi = "10.1109/VLSI-TSA.2017.7942466",

language = "English",

series = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",

}

TY - GEN

T1 - Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

AU - Lee, M. H.

AU - Chen, P. G.

AU - Fan, S. T.

AU - Kuo, C. Y.

AU - Chen, H. H.

AU - Gu, S. S.

AU - Chou, Y. C.

AU - Tang, C. H.

AU - Hong, R. C.

AU - Wang, Z. Y.

AU - Liao, M. H.

AU - Li, K. S.

AU - Chen, M. C.

AU - Liu, C. W.

PY - 2017/6/7

Y1 - 2017/6/7

N2 - Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.

AB - Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.

UR - https://www.scopus.com/pages/publications/85023175409

UR - https://www.scopus.com/pages/publications/85023175409#tab=citedBy

U2 - 10.1109/VLSI-TSA.2017.7942466

DO - 10.1109/VLSI-TSA.2017.7942466

M3 - Conference contribution

AN - SCOPUS:85023175409

T3 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

BT - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Y2 - 24 April 2017 through 27 April 2017

ER -

Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

摘要

出版系列

其他

ASJC Scopus subject areas

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其它文件與鏈接

指紋

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