@inproceedings{dba02082613f41ed9175aa55c7bdc92b,
title = "Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide",
abstract = "Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.",
author = "Lee, {M. H.} and Chen, {P. G.} and Fan, {S. T.} and Kuo, {C. Y.} and Chen, {H. H.} and Gu, {S. S.} and Chou, {Y. C.} and Tang, {C. H.} and Hong, {R. C.} and Wang, {Z. Y.} and Liao, {M. H.} and Li, {K. S.} and Chen, {M. C.} and Liu, {C. W.}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 ; Conference date: 24-04-2017 Through 27-04-2017",
year = "2017",
month = jun,
day = "7",
doi = "10.1109/VLSI-TSA.2017.7942466",
language = "English",
series = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",
}