Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

M. H. Lee*, P. G. Chen, S. T. Fan, C. Y. Kuo, H. H. Chen, S. S. Gu, Y. C. Chou, C. H. Tang, R. C. Hong, Z. Y. Wang, M. H. Liao, K. S. Li, M. C. Chen, C. W. Liu

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

2 引文 斯高帕斯(Scopus)

摘要

Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.

原文英語
主出版物標題2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781509058051
DOIs
出版狀態已發佈 - 2017 六月 7
事件2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, 臺灣
持續時間: 2017 四月 242017 四月 27

出版系列

名字2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

其他

其他2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
國家/地區臺灣
城市Hsinchu
期間2017/04/242017/04/27

ASJC Scopus subject areas

  • 硬體和架構
  • 電氣與電子工程

指紋

深入研究「Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide」主題。共同形成了獨特的指紋。

引用此