Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching

Chien Liu; Hsuan Han Chen; Chih Chieh Hsu; Chia Chi Fan; Hsiao Hsuan Hsu; Chun Hu Cheng

doi:10.23919/VLSIT.2019.8776482

Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching

Chien Liu, Hsuan Han Chen, Chih Chieh Hsu, Chia Chi Fan, Hsiao Hsuan Hsu, Chun Hu Cheng

機電工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

13 引文斯高帕斯（Scopus）

摘要

We demonstrated that the 2.5nm-thick HfAIO_x N-type NCFET based on defect-passivated multidomain switching can achieve a minimum 9 mV/dec subthreshold swing (SS), a negligible hysteresis of 1mV, an ultralow I_off of 135fA/μm, a large I_on/I_0ff ratio of 8.7×10⁷ and a sub-60 mV/dec SS over 5 decade. For P-type NCFET, the non-hysteretic steep-slope switch is still reached under the synergistic effect of gate stress, defect passivation and doping engineering. The Al doping and defect passivation play the key role for reducing trap-related leakage, enhancing NC, and stabilizing multidomain switching. The highly scaled HfAIO_x CMOS NCFET shows the potential for low power logic applications.

原文	英語
主出版物標題	2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	T224-T225
ISBN（電子）	9784863487178
DOIs	https://doi.org/10.23919/VLSIT.2019.8776482
出版狀態	已發佈 - 2019 6月
事件	39th Symposium on VLSI Technology, VLSI Technology 2019 - Kyoto, 日本持續時間: 2019 6月 9 → 2019 6月 14

出版系列

名字	Digest of Technical Papers - Symposium on VLSI Technology
卷	2019-June
ISSN（列印）	0743-1562

會議

會議	39th Symposium on VLSI Technology, VLSI Technology 2019
國家/地區	日本
城市	Kyoto
期間	2019/06/09 → 2019/06/14

ASJC Scopus subject areas

電氣與電子工程

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10.23919/VLSIT.2019.8776482

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引用此

Liu, C., Chen, H. H., Hsu, C. C., Fan, C. C., Hsu, H. H., & Cheng, C. H. (2019). Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching. 於 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers (頁 T224-T225). 文章 8776482 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSIT.2019.8776482

Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching. / Liu, Chien; Chen, Hsuan Han; Hsu, Chih Chieh 等.
2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2019. p. T224-T225 8776482 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2019-June).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Liu, C, Chen, HH, Hsu, CC, Fan, CC, Hsu, HH & Cheng, CH 2019, Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching. 於 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers., 8776482, Digest of Technical Papers - Symposium on VLSI Technology, 卷 2019-June, Institute of Electrical and Electronics Engineers Inc., 頁 T224-T225, 39th Symposium on VLSI Technology, VLSI Technology 2019, Kyoto, 日本, 2019/06/09. https://doi.org/10.23919/VLSIT.2019.8776482

Liu C, Chen HH, Hsu CC, Fan CC, Hsu HH, Cheng CH. Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching. 於 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2019. p. T224-T225. 8776482. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.23919/VLSIT.2019.8776482

Liu, Chien ; Chen, Hsuan Han ; Hsu, Chih Chieh 等. / Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching. 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2019. 頁 T224-T225 (Digest of Technical Papers - Symposium on VLSI Technology).

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title = "Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching",

abstract = "We demonstrated that the 2.5nm-thick HfAIOx N-type NCFET based on defect-passivated multidomain switching can achieve a minimum 9 mV/dec subthreshold swing (SS), a negligible hysteresis of 1mV, an ultralow Ioff of 135fA/μm, a large Ion/I0ff ratio of 8.7×107 and a sub-60 mV/dec SS over 5 decade. For P-type NCFET, the non-hysteretic steep-slope switch is still reached under the synergistic effect of gate stress, defect passivation and doping engineering. The Al doping and defect passivation play the key role for reducing trap-related leakage, enhancing NC, and stabilizing multidomain switching. The highly scaled HfAIOx CMOS NCFET shows the potential for low power logic applications.",

author = "Chien Liu and Chen, {Hsuan Han} and Hsu, {Chih Chieh} and Fan, {Chia Chi} and Hsu, {Hsiao Hsuan} and Cheng, {Chun Hu}",

note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.; 39th Symposium on VLSI Technology, VLSI Technology 2019 ; Conference date: 09-06-2019 Through 14-06-2019",

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AU - Liu, Chien

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AU - Hsu, Chih Chieh

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AU - Hsu, Hsiao Hsuan

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N2 - We demonstrated that the 2.5nm-thick HfAIOx N-type NCFET based on defect-passivated multidomain switching can achieve a minimum 9 mV/dec subthreshold swing (SS), a negligible hysteresis of 1mV, an ultralow Ioff of 135fA/μm, a large Ion/I0ff ratio of 8.7×107 and a sub-60 mV/dec SS over 5 decade. For P-type NCFET, the non-hysteretic steep-slope switch is still reached under the synergistic effect of gate stress, defect passivation and doping engineering. The Al doping and defect passivation play the key role for reducing trap-related leakage, enhancing NC, and stabilizing multidomain switching. The highly scaled HfAIOx CMOS NCFET shows the potential for low power logic applications.

AB - We demonstrated that the 2.5nm-thick HfAIOx N-type NCFET based on defect-passivated multidomain switching can achieve a minimum 9 mV/dec subthreshold swing (SS), a negligible hysteresis of 1mV, an ultralow Ioff of 135fA/μm, a large Ion/I0ff ratio of 8.7×107 and a sub-60 mV/dec SS over 5 decade. For P-type NCFET, the non-hysteretic steep-slope switch is still reached under the synergistic effect of gate stress, defect passivation and doping engineering. The Al doping and defect passivation play the key role for reducing trap-related leakage, enhancing NC, and stabilizing multidomain switching. The highly scaled HfAIOx CMOS NCFET shows the potential for low power logic applications.

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Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching

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