Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching

Chien Liu, Hsuan Han Chen, Chih Chieh Hsu, Chia Chi Fan, Hsiao Hsuan Hsu, Chun Hu Cheng

研究成果: 書貢獻/報告類型會議論文篇章

3 引文 斯高帕斯(Scopus)

摘要

We demonstrated that the 2.5nm-thick HfAIOx N-type NCFET based on defect-passivated multidomain switching can achieve a minimum 9 mV/dec subthreshold swing (SS), a negligible hysteresis of 1mV, an ultralow Ioff of 135fA/μm, a large Ion/I0ff ratio of 8.7×107 and a sub-60 mV/dec SS over 5 decade. For P-type NCFET, the non-hysteretic steep-slope switch is still reached under the synergistic effect of gate stress, defect passivation and doping engineering. The Al doping and defect passivation play the key role for reducing trap-related leakage, enhancing NC, and stabilizing multidomain switching. The highly scaled HfAIOx CMOS NCFET shows the potential for low power logic applications.

原文英語
主出版物標題2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
發行者Institute of Electrical and Electronics Engineers Inc.
頁面T224-T225
ISBN(電子)9784863487178
DOIs
出版狀態已發佈 - 2019 六月
事件39th Symposium on VLSI Technology, VLSI Technology 2019 - Kyoto, 日本
持續時間: 2019 六月 92019 六月 14

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2019-June
ISSN(列印)0743-1562

會議

會議39th Symposium on VLSI Technology, VLSI Technology 2019
國家/地區日本
城市Kyoto
期間2019/06/092019/06/14

ASJC Scopus subject areas

  • 電氣與電子工程

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